AFN8988 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AFN8988  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 90 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm

Encapsulados: SOT-89

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AFN8988 datasheet

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AFN8988

AFN8988 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8988, N-Channel enhancement mode 100V/4.6A,RDS(ON)=120m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=130m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 0.1. Size:695K  alfa-mos
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AFN8988

AFN8988W Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8988W, N-Channel enhancement mode 100V/4.6A,RDS(ON)=130m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=138m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suit

 8.1. Size:397K  alfa-mos
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AFN8988

AFN8987 Alfa-MOS 90V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8987, N-Channel enhancement mode 90V/2.3A,RDS(ON)=310m @VGS=10V MOSFET, uses Advanced Trench Technology 90V/1.8A,RDS(ON)=320m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 8.2. Size:683K  alfa-mos
 afn8987w.pdf pdf_icon

AFN8988

AFN8987W Alfa-MOS 80V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8987W, N-Channel enhancement mode 80V/4.6A,RDS(ON)=75m @VGS=10V MOSFET, uses Advanced Trench Technology 80V/3.6A,RDS(ON)=85m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

MOSTRAR MÁS

Otros transistores... AFN8822S, AFN8832, AFN8904, AFN8918, AFN8936, AFN8968, AFN8987, AFN8987W, 5N60, AFN8988W, AFN9530, AFN9910, AFN9971, AFN9971B, AFN9972S, AFN9977, AFN9987