All MOSFET. AFN8988 Datasheet

 

AFN8988 Datasheet and Replacement


   Type Designator: AFN8988
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: SOT-89
 

 AFN8988 substitution

   - MOSFET ⓘ Cross-Reference Search

 

AFN8988 Datasheet (PDF)

 ..1. Size:694K  alfa-mos
afn8988.pdf pdf_icon

AFN8988

AFN8988 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8988, N-Channel enhancement mode 100V/4.6A,RDS(ON)=120m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=130m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 0.1. Size:695K  alfa-mos
afn8988w.pdf pdf_icon

AFN8988

AFN8988W Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8988W, N-Channel enhancement mode 100V/4.6A,RDS(ON)=130m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=138m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suit

 8.1. Size:397K  alfa-mos
afn8987.pdf pdf_icon

AFN8988

AFN8987 Alfa-MOS 90V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8987, N-Channel enhancement mode 90V/2.3A,RDS(ON)=310m@VGS=10V MOSFET, uses Advanced Trench Technology 90V/1.8A,RDS(ON)=320m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 8.2. Size:683K  alfa-mos
afn8987w.pdf pdf_icon

AFN8988

AFN8987W Alfa-MOS 80V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8987W, N-Channel enhancement mode 80V/4.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology 80V/3.6A,RDS(ON)=85m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

Datasheet: AFN8822S , AFN8832 , AFN8904 , AFN8918 , AFN8936 , AFN8968 , AFN8987 , AFN8987W , 13N50 , AFN8988W , AFN9530 , AFN9910 , AFN9971 , AFN9971B , AFN9972S , AFN9977 , AFN9987 .

History: HM3407B | TPC8203 | BLP04N08-BA | AP3403GH | CJD04N60A | AG4N65S | SI8489EDB

Keywords - AFN8988 MOSFET datasheet

 AFN8988 cross reference
 AFN8988 equivalent finder
 AFN8988 lookup
 AFN8988 substitution
 AFN8988 replacement

 

 
Back to Top

 


 
.