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AFP4403 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AFP4403
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 350 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm
   Paquete / Cubierta: SOP-8P
 

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AFP4403 Datasheet (PDF)

 ..1. Size:579K  alfa-mos
 afp4403.pdf pdf_icon

AFP4403

AFP4403 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4403, P-Channel enhancement mode -20V/-9A,RDS(ON)=26m@VGS=4.5V MOSFET, uses Advanced Trench Technology -20V/-8A,RDS(ON)=34m@VGS=2.5V to provide excellent RDS(ON), low gate charge. -20V/-6A,RDS(ON)=48m@VGS=1.8V These devices are particularly suited for low Supe

 9.1. Size:589K  alfa-mos
 afp4435s.pdf pdf_icon

AFP4403

AFP4435S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4435S, P-Channel enhancement mode -30V/-9A,RDS(ON)=18m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-7A,RDS(ON)=26m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 9.2. Size:518K  alfa-mos
 afp4435.pdf pdf_icon

AFP4403

AFP4435 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4435, P-Channel enhancement mode -30V/-10A,RDS(ON)=28m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/ - 7A,RDS(ON)=45m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 9.3. Size:589K  alfa-mos
 afp4435ws.pdf pdf_icon

AFP4403

AFP4435WS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4435WS, P-Channel enhancement mode -30V/-9A,RDS(ON)=18m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-7A,RDS(ON)=26m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite

MOSTRAR MÁS

Otros transistores... AFP3459 , AFP3481S , AFP3485 , AFP3497 , AFP3679S , AFP3804 , AFP3981 , AFP3993 , IRFP260 , AFP4435 , AFP4435S , AFP4435W , AFP4435WS , AFP4447 , AFP4535 , AFP4535W , AFP4599W .

History: WMR14N03TB | R6530KNZ1 | STB34N65M5 | IPB049NE7N3

 

 
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