AFP4403 Datasheet. Specs and Replacement

Type Designator: AFP4403  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm

Package: SOP-8P

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AFP4403 datasheet

 ..1. Size:579K  alfa-mos
 afp4403.pdf pdf_icon

AFP4403

AFP4403 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4403, P-Channel enhancement mode -20V/-9A,RDS(ON)=26m @VGS=4.5V MOSFET, uses Advanced Trench Technology -20V/-8A,RDS(ON)=34m @VGS=2.5V to provide excellent RDS(ON), low gate charge. -20V/-6A,RDS(ON)=48m @VGS=1.8V These devices are particularly suited for low Supe... See More ⇒

 9.1. Size:589K  alfa-mos
 afp4435s.pdf pdf_icon

AFP4403

AFP4435S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4435S, P-Channel enhancement mode -30V/-9A,RDS(ON)=18m @VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-7A,RDS(ON)=26m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited ... See More ⇒

 9.2. Size:518K  alfa-mos
 afp4435.pdf pdf_icon

AFP4403

AFP4435 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4435, P-Channel enhancement mode -30V/-10A,RDS(ON)=28m @VGS=-10V MOSFET, uses Advanced Trench Technology -30V/ - 7A,RDS(ON)=45m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited... See More ⇒

 9.3. Size:589K  alfa-mos
 afp4435ws.pdf pdf_icon

AFP4403

AFP4435WS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4435WS, P-Channel enhancement mode -30V/-9A,RDS(ON)=18m @VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-7A,RDS(ON)=26m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite... See More ⇒

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Detailed specifications: AFP3459, AFP3481S, AFP3485, AFP3497, AFP3679S, AFP3804, AFP3981, AFP3993, 2SK3878, AFP4435, AFP4435S, AFP4435W, AFP4435WS, AFP4447, AFP4535, AFP4535W, AFP4599W

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