AFP4447 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AFP4447  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 40 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 22 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 120 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: TO-252-2L

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AFP4447 datasheet

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AFP4447

AFP4447 Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4447, P-Channel enhancement mode -40V/ -10A,RDS(ON)= 40m @VGS= -10V MOSFET, uses Advanced Trench Technology -40V/ -8A,RDS(ON)= 55m @VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly su

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 afp4435s.pdf pdf_icon

AFP4447

AFP4435S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4435S, P-Channel enhancement mode -30V/-9A,RDS(ON)=18m @VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-7A,RDS(ON)=26m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

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 afp4403.pdf pdf_icon

AFP4447

AFP4403 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4403, P-Channel enhancement mode -20V/-9A,RDS(ON)=26m @VGS=4.5V MOSFET, uses Advanced Trench Technology -20V/-8A,RDS(ON)=34m @VGS=2.5V to provide excellent RDS(ON), low gate charge. -20V/-6A,RDS(ON)=48m @VGS=1.8V These devices are particularly suited for low Supe

 9.3. Size:518K  alfa-mos
 afp4435.pdf pdf_icon

AFP4447

AFP4435 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4435, P-Channel enhancement mode -30V/-10A,RDS(ON)=28m @VGS=-10V MOSFET, uses Advanced Trench Technology -30V/ - 7A,RDS(ON)=45m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

MOSTRAR MÁS

Otros transistores... AFP3804, AFP3981, AFP3993, AFP4403, AFP4435, AFP4435S, AFP4435W, AFP4435WS, 2SK3878, AFP4535, AFP4535W, AFP4599W, AFP4637, AFP4637W, AFP4925, AFP4925S, AFP4925W