Справочник MOSFET. AFP4447

 

AFP4447 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AFP4447
   Маркировка: 4447
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 40 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 22 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 11 nC
   trⓘ - Время нарастания: 35 ns
   Cossⓘ - Выходная емкость: 120 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
   Тип корпуса: TO-252-2L

 Аналог (замена) для AFP4447

 

 

AFP4447 Datasheet (PDF)

 ..1. Size:880K  alfa-mos
 afp4447.pdf

AFP4447 AFP4447

AFP4447 Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4447, P-Channel enhancement mode -40V/ -10A,RDS(ON)= 40m@VGS= -10V MOSFET, uses Advanced Trench Technology -40V/ -8A,RDS(ON)= 55m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly su

 9.1. Size:589K  alfa-mos
 afp4435s.pdf

AFP4447 AFP4447

AFP4435S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4435S, P-Channel enhancement mode -30V/-9A,RDS(ON)=18m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-7A,RDS(ON)=26m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 9.2. Size:579K  alfa-mos
 afp4403.pdf

AFP4447 AFP4447

AFP4403 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4403, P-Channel enhancement mode -20V/-9A,RDS(ON)=26m@VGS=4.5V MOSFET, uses Advanced Trench Technology -20V/-8A,RDS(ON)=34m@VGS=2.5V to provide excellent RDS(ON), low gate charge. -20V/-6A,RDS(ON)=48m@VGS=1.8V These devices are particularly suited for low Supe

 9.3. Size:518K  alfa-mos
 afp4435.pdf

AFP4447 AFP4447

AFP4435 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4435, P-Channel enhancement mode -30V/-10A,RDS(ON)=28m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/ - 7A,RDS(ON)=45m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 9.4. Size:589K  alfa-mos
 afp4435ws.pdf

AFP4447 AFP4447

AFP4435WS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4435WS, P-Channel enhancement mode -30V/-9A,RDS(ON)=18m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-7A,RDS(ON)=26m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite

 9.5. Size:518K  alfa-mos
 afp4435w.pdf

AFP4447 AFP4447

AFP4435W Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4435W, P-Channel enhancement mode -30V/-10A,RDS(ON)=30m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/ - 7A,RDS(ON)=45m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suit

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