All MOSFET. AFP4447 Datasheet

 

AFP4447 Datasheet and Replacement


   Type Designator: AFP4447
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO-252-2L
 

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AFP4447 Datasheet (PDF)

 ..1. Size:880K  alfa-mos
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AFP4447

AFP4447 Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4447, P-Channel enhancement mode -40V/ -10A,RDS(ON)= 40m@VGS= -10V MOSFET, uses Advanced Trench Technology -40V/ -8A,RDS(ON)= 55m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly su

 9.1. Size:589K  alfa-mos
 afp4435s.pdf pdf_icon

AFP4447

AFP4435S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4435S, P-Channel enhancement mode -30V/-9A,RDS(ON)=18m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-7A,RDS(ON)=26m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 9.2. Size:579K  alfa-mos
 afp4403.pdf pdf_icon

AFP4447

AFP4403 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4403, P-Channel enhancement mode -20V/-9A,RDS(ON)=26m@VGS=4.5V MOSFET, uses Advanced Trench Technology -20V/-8A,RDS(ON)=34m@VGS=2.5V to provide excellent RDS(ON), low gate charge. -20V/-6A,RDS(ON)=48m@VGS=1.8V These devices are particularly suited for low Supe

 9.3. Size:518K  alfa-mos
 afp4435.pdf pdf_icon

AFP4447

AFP4435 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4435, P-Channel enhancement mode -30V/-10A,RDS(ON)=28m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/ - 7A,RDS(ON)=45m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

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Datasheet: AFP3804 , AFP3981 , AFP3993 , AFP4403 , AFP4435 , AFP4435S , AFP4435W , AFP4435WS , 5N60 , AFP4535 , AFP4535W , AFP4599W , AFP4637 , AFP4637W , AFP4925 , AFP4925S , AFP4925W .

History: RJK0653DPB | LSE65R099GF | APT30M30JFLL | STN3414 | BUK9K18-40E | CS6N70F | YJG90G10A

Keywords - AFP4447 MOSFET datasheet

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