AFP4447
MOSFET. Datasheet pdf. Equivalent
Type Designator: AFP4447
Marking Code: 4447
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 40
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 22
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 11
nC
trⓘ - Rise Time: 35
nS
Cossⓘ -
Output Capacitance: 120
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04
Ohm
Package: TO-252-2L
AFP4447
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AFP4447
Datasheet (PDF)
..1. Size:880K alfa-mos
afp4447.pdf
AFP4447 Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4447, P-Channel enhancement mode -40V/ -10A,RDS(ON)= 40m@VGS= -10V MOSFET, uses Advanced Trench Technology -40V/ -8A,RDS(ON)= 55m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly su
9.1. Size:589K alfa-mos
afp4435s.pdf
AFP4435S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4435S, P-Channel enhancement mode -30V/-9A,RDS(ON)=18m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-7A,RDS(ON)=26m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
9.2. Size:579K alfa-mos
afp4403.pdf
AFP4403 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4403, P-Channel enhancement mode -20V/-9A,RDS(ON)=26m@VGS=4.5V MOSFET, uses Advanced Trench Technology -20V/-8A,RDS(ON)=34m@VGS=2.5V to provide excellent RDS(ON), low gate charge. -20V/-6A,RDS(ON)=48m@VGS=1.8V These devices are particularly suited for low Supe
9.3. Size:518K alfa-mos
afp4435.pdf
AFP4435 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4435, P-Channel enhancement mode -30V/-10A,RDS(ON)=28m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/ - 7A,RDS(ON)=45m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
9.4. Size:589K alfa-mos
afp4435ws.pdf
AFP4435WS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4435WS, P-Channel enhancement mode -30V/-9A,RDS(ON)=18m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-7A,RDS(ON)=26m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite
9.5. Size:518K alfa-mos
afp4435w.pdf
AFP4435W Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4435W, P-Channel enhancement mode -30V/-10A,RDS(ON)=30m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/ - 7A,RDS(ON)=45m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suit
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