AFP8473 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AFP8473
   Código: 8473
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 2.8 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 4.8 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
   Carga de la puerta (Qg): 5 nC
   Tiempo de subida (tr): 15 nS
   Conductancia de drenaje-sustrato (Cd): 45 pF
   Resistencia entre drenaje y fuente RDS(on): 0.135 Ohm
   Paquete / Cubierta: SOT-223

Búsqueda de reemplazo de MOSFET AFP8473

AFP8473 Datasheet (PDF)

..1. Size:574K alfa-mos
afp8473.pdf

AFP8473 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8473, P-Channel enhancement mode -60V/-4.8A,RDS(ON)= 135m@VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-3.6A,RDS(ON)= 155m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

9.1. Size:537K alfa-mos
afp8452.pdf

AFP8452 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8452, P-Channel enhancement mode -30V/-5.0A,RDS(ON)=70m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-4.2A,RDS(ON)=90m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui

9.2. Size:797K alfa-mos
afp8463.pdf

AFP8463 Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8463, P-Channel enhancement mode -40V/-6.0A,RDS(ON)= 46m@VGS= -10V MOSFET, uses Advanced Trench Technology -40V/-4.2A,RDS(ON)= 62m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

9.3. Size:493K alfa-mos
afp8483.pdf

AFP8483 Alfa-MOS 100V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8483, P-Channel enhancement mode -100V/-3.8A,RDS(ON)= 260m@VGS= -10V MOSFET, uses Advanced Trench Technology -100V/-2.6A,RDS(ON)= 290m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particula

9.4. Size:567K alfa-mos
afp8451.pdf

AFP8451 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8451, P-Channel enhancement mode -60V/-3.0A,RDS(ON)=305m@VGS=-10V MOSFET, uses Advanced Trench Technology -60V/-2.0A,RDS(ON)=330m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui

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