AFP8473 Datasheet. Specs and Replacement

Type Designator: AFP8473  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm

Package: SOT-223

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AFP8473 datasheet

 ..1. Size:574K  alfa-mos
 afp8473.pdf pdf_icon

AFP8473

AFP8473 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8473, P-Channel enhancement mode -60V/-4.8A,RDS(ON)= 135m @VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-3.6A,RDS(ON)= 155m @VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly... See More ⇒

 9.1. Size:537K  alfa-mos
 afp8452.pdf pdf_icon

AFP8473

AFP8452 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8452, P-Channel enhancement mode -30V/-5.0A,RDS(ON)=70m @VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-4.2A,RDS(ON)=90m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui... See More ⇒

 9.2. Size:797K  alfa-mos
 afp8463.pdf pdf_icon

AFP8473

AFP8463 Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8463, P-Channel enhancement mode -40V/-6.0A,RDS(ON)= 46m @VGS= -10V MOSFET, uses Advanced Trench Technology -40V/-4.2A,RDS(ON)= 62m @VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s... See More ⇒

 9.3. Size:493K  alfa-mos
 afp8483.pdf pdf_icon

AFP8473

AFP8483 Alfa-MOS 100V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8483, P-Channel enhancement mode -100V/-3.8A,RDS(ON)= 260m @VGS= -10V MOSFET, uses Advanced Trench Technology -100V/-2.6A,RDS(ON)= 290m @VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particula... See More ⇒

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Detailed specifications: AFP6459, AFP6801, AFP6993, AFP7617WS, AFP8206, AFP8451, AFP8452, AFP8463, 4N60, AFP8483, AFP8803, AFP8823, AFP8833, AFP8931, AFP8943, AFP8989, AFP8995

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