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AFP8989 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AFP8989
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.115 Ohm
   Paquete / Cubierta: SOT-89
 

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AFP8989 Datasheet (PDF)

 ..1. Size:606K  alfa-mos
 afp8989.pdf pdf_icon

AFP8989

AFP8989 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8989, P-Channel enhancement mode -60V/-3.6A,RDS(ON)= 115m@VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-2.6A,RDS(ON)= 125m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

 9.1. Size:915K  alfa-mos
 afp8943.pdf pdf_icon

AFP8989

AFP8943 Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8943, P-Channel enhancement mode -40V/-4.6A,RDS(ON)= 43m@VGS= -10V MOSFET, uses Advanced Trench Technology -40V/-3.6A,RDS(ON)= 58m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

 9.2. Size:689K  alfa-mos
 afp8995.pdf pdf_icon

AFP8989

AFP8995 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8995, P-Channel enhancement mode -30V/-4.6A,RDS(ON)= 125m@VGS= -10V MOSFET, uses Advanced Trench Technology -30V/-3.6A,RDS(ON)= 165m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

 9.3. Size:595K  alfa-mos
 afp8931.pdf pdf_icon

AFP8989

AFP8931 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8931, P-Channel enhancement mode -30V/-4.6A,RDS(ON)= 36m@VGS= -10V MOSFET, uses Advanced Trench Technology -30V/-3.6A,RDS(ON)= 46m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

MOSTRAR MÁS

Otros transistores... AFP8463 , AFP8473 , AFP8483 , AFP8803 , AFP8823 , AFP8833 , AFP8931 , AFP8943 , IRFZ46N , AFP8995 , AFP9407 , AFP9434WS , AFP9435S , AFP9435WS , AFP9510S , AFP9565S , AFP9566W .

History: IPP027N08N5 | SFG250N08PF | SRT10N120LD1 | AUIRF1324S-7P | IRFB4228PBF | JFPC7N90C | SFG15N10DF

 

 
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