AFP8989 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AFP8989

Código: 89*

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.45 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 3.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.5 V

Carga de compuerta (Qg): 12 nC

Tiempo de elevación (tr): 6 nS

Conductancia de drenaje-sustrato (Cd): 90 pF

Resistencia drenaje-fuente RDS(on): 0.115 Ohm

Empaquetado / Estuche: SOT-89

Búsqueda de reemplazo de MOSFET AFP8989

AFP8989 Datasheet (PDF)

1.1. afp8989.pdf Size:606K _upd-mosfet

AFP8989 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8989, P-Channel enhancement mode -60V/-3.6A,RDS(ON)= 115mΩ@VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-2.6A,RDS(ON)= 125mΩ@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

5.1. afp8931.pdf Size:595K _upd-mosfet

AFP8931 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8931, P-Channel enhancement mode -30V/-4.6A,RDS(ON)= 36mΩ@VGS= -10V MOSFET, uses Advanced Trench Technology -30V/-3.6A,RDS(ON)= 46mΩ@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

5.2. afp8943.pdf Size:915K _upd-mosfet

AFP8943 Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8943, P-Channel enhancement mode -40V/-4.6A,RDS(ON)= 43mΩ@VGS= -10V MOSFET, uses Advanced Trench Technology -40V/-3.6A,RDS(ON)= 58mΩ@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

5.3. afp8995.pdf Size:689K _upd-mosfet

AFP8995 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8995, P-Channel enhancement mode -30V/-4.6A,RDS(ON)= 125mΩ@VGS= -10V MOSFET, uses Advanced Trench Technology -30V/-3.6A,RDS(ON)= 165mΩ@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

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