All MOSFET. AFP8989 Datasheet

 

AFP8989 Datasheet and Replacement


   Type Designator: AFP8989
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm
   Package: SOT-89
 

 AFP8989 substitution

   - MOSFET ⓘ Cross-Reference Search

 

AFP8989 Datasheet (PDF)

 ..1. Size:606K  alfa-mos
 afp8989.pdf pdf_icon

AFP8989

AFP8989 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8989, P-Channel enhancement mode -60V/-3.6A,RDS(ON)= 115m@VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-2.6A,RDS(ON)= 125m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

 9.1. Size:915K  alfa-mos
 afp8943.pdf pdf_icon

AFP8989

AFP8943 Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8943, P-Channel enhancement mode -40V/-4.6A,RDS(ON)= 43m@VGS= -10V MOSFET, uses Advanced Trench Technology -40V/-3.6A,RDS(ON)= 58m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

 9.2. Size:689K  alfa-mos
 afp8995.pdf pdf_icon

AFP8989

AFP8995 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8995, P-Channel enhancement mode -30V/-4.6A,RDS(ON)= 125m@VGS= -10V MOSFET, uses Advanced Trench Technology -30V/-3.6A,RDS(ON)= 165m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

 9.3. Size:595K  alfa-mos
 afp8931.pdf pdf_icon

AFP8989

AFP8931 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8931, P-Channel enhancement mode -30V/-4.6A,RDS(ON)= 36m@VGS= -10V MOSFET, uses Advanced Trench Technology -30V/-3.6A,RDS(ON)= 46m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

SHOW MORE

Datasheet: AFP8463 , AFP8473 , AFP8483 , AFP8803 , AFP8823 , AFP8833 , AFP8931 , AFP8943 , IRFZ46N , AFP8995 , AFP9407 , AFP9434WS , AFP9435S , AFP9435WS , AFP9510S , AFP9565S , AFP9566W .

Keywords - AFP8989 MOSFET datasheet

 AFP8989 cross reference
 AFP8989 equivalent finder
 AFP8989 lookup
 AFP8989 substitution
 AFP8989 replacement

 

 
Back to Top

 


 
.