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AFP9435WS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AFP9435WS
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.058 Ohm
   Paquete / Cubierta: SOP-8P
 

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AFP9435WS Datasheet (PDF)

 ..1. Size:593K  alfa-mos
 afp9435ws.pdf pdf_icon

AFP9435WS

AFP9435WS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9435WS, P-Channel enhancement mode -30V/-5.3A,RDS(ON)=58m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-4.2A,RDS(ON)=78m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

 7.1. Size:593K  alfa-mos
 afp9435s.pdf pdf_icon

AFP9435WS

AFP9435S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9435S, P-Channel enhancement mode -30V/-5.3A,RDS(ON)=52m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-4.2A,RDS(ON)=76m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui

 8.1. Size:559K  alfa-mos
 afp9434ws.pdf pdf_icon

AFP9435WS

AFP9434WS Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9434WS, P-Channel enhancement mode -20V/-6.5A,RDS(ON)=42m@VGS=4.5V MOSFET, uses Advanced Trench Technology -20V/-4.5A,RDS(ON)=58m@VGS=2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.5A,RDS(ON)=72m@VGS=1.8V These devices are particularly suited for l

 9.1. Size:495K  alfa-mos
 afp9407.pdf pdf_icon

AFP9435WS

AFP9407 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9407, P-Channel enhancement mode -60V/-4.6A,RDS(ON)= 100m@VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-3.8A,RDS(ON)= 120m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

MOSTRAR MÁS

Otros transistores... AFP8833 , AFP8931 , AFP8943 , AFP8989 , AFP8995 , AFP9407 , AFP9434WS , AFP9435S , IRFB31N20D , AFP9510S , AFP9565S , AFP9566W , AFP9575S , AFP9576 , AFP9577 , ALD1101APAL , ALD1101ASAL .

History: WMN53N65F2 | AOD242 | 5N65KG-TF3-T | SL5N100P | IPB60R360P7 | SVF830F | TMU2N40

 

 
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