AFP9435WS MOSFET Datasheet: P-Ch, 30V, 6A. Full specification with pinout and replacement list

AFP9435WS Specs and Replacement

   Type Designator: AFP9435WS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
   Package: SOP-8P

AFP9435WS substitution

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AFP9435WS datasheet

..1. Size:593K alfa-mos
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AFP9435WS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9435WS, P-Channel enhancement mode -30V/-5.3A,RDS(ON)=58m @VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-4.2A,RDS(ON)=78m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s... See More ⇒

7.1. Size:593K alfa-mos
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AFP9435S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9435S, P-Channel enhancement mode -30V/-5.3A,RDS(ON)=52m @VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-4.2A,RDS(ON)=76m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui... See More ⇒

8.1. Size:559K alfa-mos
afp9434ws.pdf pdf_icon

AFP9434WS Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9434WS, P-Channel enhancement mode -20V/-6.5A,RDS(ON)=42m @VGS=4.5V MOSFET, uses Advanced Trench Technology -20V/-4.5A,RDS(ON)=58m @VGS=2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.5A,RDS(ON)=72m @VGS=1.8V These devices are particularly suited for l... See More ⇒

9.1. Size:495K alfa-mos
afp9407.pdf pdf_icon

AFP9407 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9407, P-Channel enhancement mode -60V/-4.6A,RDS(ON)= 100m @VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-3.8A,RDS(ON)= 120m @VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly... See More ⇒

Detailed specifications: AFP8833 , AFP8931 , AFP8943 , AFP8989 , AFP8995 , AFP9407 , AFP9434WS , AFP9435S , IRF2807 , AFP9510S , AFP9565S , AFP9566W , AFP9575S , AFP9576 , AFP9577 , ALD1101APAL , ALD1101ASAL .