AFP9510S Todos los transistores

 

AFP9510S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AFP9510S

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 40 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 8.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 70 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm

Encapsulados: TO-252

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AFP9510S datasheet

 ..1. Size:808K  alfa-mos
 afp9510s.pdf pdf_icon

AFP9510S

AFP9510S Alfa-MOS 100 P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9510S, P-Channel enhancement mode -100/-8.0A,RDS(ON)= 200m @VGS= -10V MOSFET, uses Advanced Trench Technology -100/-7.0A,RDS(ON)= 220m @VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particular

 9.1. Size:830K  alfa-mos
 afp9577.pdf pdf_icon

AFP9510S

AFP9577 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9577, P-Channel enhancement mode -60V/-4A,RDS(ON)= 305m @VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-3A,RDS(ON)= 330m @VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui

 9.2. Size:784K  alfa-mos
 afp9566w.pdf pdf_icon

AFP9510S

AFP9566W Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9566W, P-Channel enhancement mode -40V/-5.0A,RDS(ON)= 80m @VGS= -10V MOSFET, uses Advanced Trench Technology -40V/-3.5A,RDS(ON)= 105m @VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularl

 9.3. Size:751K  alfa-mos
 afp9576.pdf pdf_icon

AFP9510S

AFP9576 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9576, P-Channel enhancement mode -60V/-14A,RDS(ON)= 115m @VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-10A,RDS(ON)= 125m @VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

MOSTRAR MÁS

Otros transistores... AFP8931 , AFP8943 , AFP8989 , AFP8995 , AFP9407 , AFP9434WS , AFP9435S , AFP9435WS , STF13NM60N , AFP9565S , AFP9566W , AFP9575S , AFP9576 , AFP9577 , ALD1101APAL , ALD1101ASAL , ALD1101BPAL .

History: ELM36402EA | FQB34P10TMF085 | APM3009NUC | DMN6017SK3 | LS3958

 

 

 

 

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