AFP9510S
MOSFET. Datasheet pdf. Equivalent
Type Designator: AFP9510S
Marking Code: 9510S
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 40
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 8.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 12
nC
trⓘ - Rise Time: 15
nS
Cossⓘ -
Output Capacitance: 70
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2
Ohm
Package:
TO-252
AFP9510S
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AFP9510S
Datasheet (PDF)
..1. Size:808K alfa-mos
afp9510s.pdf
AFP9510S Alfa-MOS 100 P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9510S, P-Channel enhancement mode -100/-8.0A,RDS(ON)= 200m@VGS= -10V MOSFET, uses Advanced Trench Technology -100/-7.0A,RDS(ON)= 220m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particular
9.1. Size:830K alfa-mos
afp9577.pdf
AFP9577 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9577, P-Channel enhancement mode -60V/-4A,RDS(ON)= 305m@VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-3A,RDS(ON)= 330m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui
9.2. Size:784K alfa-mos
afp9566w.pdf
AFP9566W Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9566W, P-Channel enhancement mode -40V/-5.0A,RDS(ON)= 80m@VGS= -10V MOSFET, uses Advanced Trench Technology -40V/-3.5A,RDS(ON)= 105m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularl
9.3. Size:751K alfa-mos
afp9576.pdf
AFP9576 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9576, P-Channel enhancement mode -60V/-14A,RDS(ON)= 115m@VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-10A,RDS(ON)= 125m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s
9.4. Size:821K alfa-mos
afp9565s.pdf
AFP9565S Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9565S, P-Channel enhancement mode -40V/ -8.6A,RDS(ON)= 58m@VGS= -10V MOSFET, uses Advanced Trench Technology -40V/ -6.2A,RDS(ON)= 86m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particular
9.5. Size:880K alfa-mos
afp9575s.pdf
AFP9575S Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9575S, P-Channel enhancement mode -60V/-18A,RDS(ON)= 68m@VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-12A,RDS(ON)= 78m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s
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