All MOSFET. AFP9510S Datasheet

 

AFP9510S Datasheet and Replacement


   Type Designator: AFP9510S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO-252
 

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AFP9510S Datasheet (PDF)

 ..1. Size:808K  alfa-mos
 afp9510s.pdf pdf_icon

AFP9510S

AFP9510S Alfa-MOS 100 P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9510S, P-Channel enhancement mode -100/-8.0A,RDS(ON)= 200m@VGS= -10V MOSFET, uses Advanced Trench Technology -100/-7.0A,RDS(ON)= 220m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particular

 9.1. Size:830K  alfa-mos
 afp9577.pdf pdf_icon

AFP9510S

AFP9577 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9577, P-Channel enhancement mode -60V/-4A,RDS(ON)= 305m@VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-3A,RDS(ON)= 330m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui

 9.2. Size:784K  alfa-mos
 afp9566w.pdf pdf_icon

AFP9510S

AFP9566W Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9566W, P-Channel enhancement mode -40V/-5.0A,RDS(ON)= 80m@VGS= -10V MOSFET, uses Advanced Trench Technology -40V/-3.5A,RDS(ON)= 105m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularl

 9.3. Size:751K  alfa-mos
 afp9576.pdf pdf_icon

AFP9510S

AFP9576 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9576, P-Channel enhancement mode -60V/-14A,RDS(ON)= 115m@VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-10A,RDS(ON)= 125m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

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Datasheet: AFP8931 , AFP8943 , AFP8989 , AFP8995 , AFP9407 , AFP9434WS , AFP9435S , AFP9435WS , IRF2807 , AFP9565S , AFP9566W , AFP9575S , AFP9576 , AFP9577 , ALD1101APAL , ALD1101ASAL , ALD1101BPAL .

History: SI2324DS-T1-GE3 | HRF130N06K | STP12NM50 | AFP9575S | SDF450 | UPA2723UT1A | IRHNA57260

Keywords - AFP9510S MOSFET datasheet

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