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AFP9575S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AFP9575S
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 140 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.068 Ohm
   Paquete / Cubierta: TO-252
 

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AFP9575S Datasheet (PDF)

 ..1. Size:880K  alfa-mos
 afp9575s.pdf pdf_icon

AFP9575S

AFP9575S Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9575S, P-Channel enhancement mode -60V/-18A,RDS(ON)= 68m@VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-12A,RDS(ON)= 78m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

 8.1. Size:830K  alfa-mos
 afp9577.pdf pdf_icon

AFP9575S

AFP9577 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9577, P-Channel enhancement mode -60V/-4A,RDS(ON)= 305m@VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-3A,RDS(ON)= 330m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui

 8.2. Size:751K  alfa-mos
 afp9576.pdf pdf_icon

AFP9575S

AFP9576 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9576, P-Channel enhancement mode -60V/-14A,RDS(ON)= 115m@VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-10A,RDS(ON)= 125m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

 9.1. Size:784K  alfa-mos
 afp9566w.pdf pdf_icon

AFP9575S

AFP9566W Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9566W, P-Channel enhancement mode -40V/-5.0A,RDS(ON)= 80m@VGS= -10V MOSFET, uses Advanced Trench Technology -40V/-3.5A,RDS(ON)= 105m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularl

MOSTRAR MÁS

Otros transistores... AFP8995 , AFP9407 , AFP9434WS , AFP9435S , AFP9435WS , AFP9510S , AFP9565S , AFP9566W , K2611 , AFP9576 , AFP9577 , ALD1101APAL , ALD1101ASAL , ALD1101BPAL , ALD1101BSAL , ALD1101PAL , ALD1101SAL .

History: STL35N15F3 | 2SK2533 | SI2324DS-T1-GE3 | SIR770DP | SSG4934N | IRFU9N20D | TPA65R100MFD

 

 
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