AFP9575S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AFP9575S
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 140 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.068 Ohm
   Paquete / Cubierta: TO-252

Búsqueda de reemplazo de MOSFET AFP9575S

AFP9575S Datasheet (PDF)

..1. Size:880K alfa-mos
afp9575s.pdf

AFP9575S Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9575S, P-Channel enhancement mode -60V/-18A,RDS(ON)= 68m@VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-12A,RDS(ON)= 78m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

8.1. Size:830K alfa-mos
afp9577.pdf

AFP9577 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9577, P-Channel enhancement mode -60V/-4A,RDS(ON)= 305m@VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-3A,RDS(ON)= 330m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui

8.2. Size:751K alfa-mos
afp9576.pdf

AFP9576 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9576, P-Channel enhancement mode -60V/-14A,RDS(ON)= 115m@VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-10A,RDS(ON)= 125m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

9.1. Size:784K alfa-mos
afp9566w.pdf

AFP9566W Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9566W, P-Channel enhancement mode -40V/-5.0A,RDS(ON)= 80m@VGS= -10V MOSFET, uses Advanced Trench Technology -40V/-3.5A,RDS(ON)= 105m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularl

9.2. Size:808K alfa-mos
afp9510s.pdf

AFP9510S Alfa-MOS 100 P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9510S, P-Channel enhancement mode -100/-8.0A,RDS(ON)= 200m@VGS= -10V MOSFET, uses Advanced Trench Technology -100/-7.0A,RDS(ON)= 220m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particular

9.3. Size:821K alfa-mos
afp9565s.pdf

AFP9565S Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9565S, P-Channel enhancement mode -40V/ -8.6A,RDS(ON)= 58m@VGS= -10V MOSFET, uses Advanced Trench Technology -40V/ -6.2A,RDS(ON)= 86m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particular

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