AFP9575S Datasheet. Specs and Replacement

Type Designator: AFP9575S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm

Package: TO-252

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AFP9575S datasheet

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AFP9575S

AFP9575S Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9575S, P-Channel enhancement mode -60V/-18A,RDS(ON)= 68m @VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-12A,RDS(ON)= 78m @VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s... See More ⇒

 8.1. Size:830K  alfa-mos
 afp9577.pdf pdf_icon

AFP9575S

AFP9577 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9577, P-Channel enhancement mode -60V/-4A,RDS(ON)= 305m @VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-3A,RDS(ON)= 330m @VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui... See More ⇒

 8.2. Size:751K  alfa-mos
 afp9576.pdf pdf_icon

AFP9575S

AFP9576 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9576, P-Channel enhancement mode -60V/-14A,RDS(ON)= 115m @VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-10A,RDS(ON)= 125m @VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s... See More ⇒

 9.1. Size:784K  alfa-mos
 afp9566w.pdf pdf_icon

AFP9575S

AFP9566W Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9566W, P-Channel enhancement mode -40V/-5.0A,RDS(ON)= 80m @VGS= -10V MOSFET, uses Advanced Trench Technology -40V/-3.5A,RDS(ON)= 105m @VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularl... See More ⇒

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Detailed specifications: AFP8995, AFP9407, AFP9434WS, AFP9435S, AFP9435WS, AFP9510S, AFP9565S, AFP9566W, 8N60, AFP9576, AFP9577, ALD1101APAL, ALD1101ASAL, ALD1101BPAL, ALD1101BSAL, ALD1101PAL, ALD1101SAL

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