AFP9577 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AFP9577
   Código: 9577
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 40 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 7 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
   Carga de la puerta (Qg): 2.7 nC
   Tiempo de subida (tr): 10 nS
   Conductancia de drenaje-sustrato (Cd): 25 pF
   Resistencia entre drenaje y fuente RDS(on): 0.305 Ohm
   Paquete / Cubierta: TO-252

Búsqueda de reemplazo de MOSFET AFP9577

AFP9577 Datasheet (PDF)

..1. Size:830K alfa-mos
afp9577.pdf

AFP9577 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9577, P-Channel enhancement mode -60V/-4A,RDS(ON)= 305m@VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-3A,RDS(ON)= 330m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui

8.1. Size:751K alfa-mos
afp9576.pdf

AFP9576 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9576, P-Channel enhancement mode -60V/-14A,RDS(ON)= 115m@VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-10A,RDS(ON)= 125m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

8.2. Size:880K alfa-mos
afp9575s.pdf

AFP9575S Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9575S, P-Channel enhancement mode -60V/-18A,RDS(ON)= 68m@VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-12A,RDS(ON)= 78m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

9.1. Size:784K alfa-mos
afp9566w.pdf

AFP9566W Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9566W, P-Channel enhancement mode -40V/-5.0A,RDS(ON)= 80m@VGS= -10V MOSFET, uses Advanced Trench Technology -40V/-3.5A,RDS(ON)= 105m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularl

9.2. Size:808K alfa-mos
afp9510s.pdf

AFP9510S Alfa-MOS 100 P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9510S, P-Channel enhancement mode -100/-8.0A,RDS(ON)= 200m@VGS= -10V MOSFET, uses Advanced Trench Technology -100/-7.0A,RDS(ON)= 220m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particular

9.3. Size:821K alfa-mos
afp9565s.pdf

AFP9565S Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9565S, P-Channel enhancement mode -40V/ -8.6A,RDS(ON)= 58m@VGS= -10V MOSFET, uses Advanced Trench Technology -40V/ -6.2A,RDS(ON)= 86m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particular

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

Liste

Recientemente añadidas las descripciónes de los transistores: