AFP9577 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AFP9577
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 25 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.305 Ohm
Encapsulados: TO-252
Búsqueda de reemplazo de AFP9577 MOSFET
- Selecciónⓘ de transistores por parámetros
AFP9577 datasheet
afp9577.pdf
AFP9577 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9577, P-Channel enhancement mode -60V/-4A,RDS(ON)= 305m @VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-3A,RDS(ON)= 330m @VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui
afp9576.pdf
AFP9576 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9576, P-Channel enhancement mode -60V/-14A,RDS(ON)= 115m @VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-10A,RDS(ON)= 125m @VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s
afp9575s.pdf
AFP9575S Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9575S, P-Channel enhancement mode -60V/-18A,RDS(ON)= 68m @VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-12A,RDS(ON)= 78m @VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s
afp9566w.pdf
AFP9566W Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9566W, P-Channel enhancement mode -40V/-5.0A,RDS(ON)= 80m @VGS= -10V MOSFET, uses Advanced Trench Technology -40V/-3.5A,RDS(ON)= 105m @VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularl
Otros transistores... AFP9434WS , AFP9435S , AFP9435WS , AFP9510S , AFP9565S , AFP9566W , AFP9575S , AFP9576 , 75N75 , ALD1101APAL , ALD1101ASAL , ALD1101BPAL , ALD1101BSAL , ALD1101PAL , ALD1101SAL , ALD1102APAL , ALD1102ASAL .
History: BS170G | SIZ904DT
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10
Popular searches
2n1308 transistor | p609 | bc327-40 | tip125 | a992 transistor | 2sa913 | 2sc711 datasheet | bu4508dx