All MOSFET. AFP9577 Datasheet

 

AFP9577 Datasheet and Replacement


   Type Designator: AFP9577
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.305 Ohm
   Package: TO-252
 

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AFP9577 Datasheet (PDF)

 ..1. Size:830K  alfa-mos
 afp9577.pdf pdf_icon

AFP9577

AFP9577 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9577, P-Channel enhancement mode -60V/-4A,RDS(ON)= 305m@VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-3A,RDS(ON)= 330m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui

 8.1. Size:751K  alfa-mos
 afp9576.pdf pdf_icon

AFP9577

AFP9576 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9576, P-Channel enhancement mode -60V/-14A,RDS(ON)= 115m@VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-10A,RDS(ON)= 125m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

 8.2. Size:880K  alfa-mos
 afp9575s.pdf pdf_icon

AFP9577

AFP9575S Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9575S, P-Channel enhancement mode -60V/-18A,RDS(ON)= 68m@VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-12A,RDS(ON)= 78m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

 9.1. Size:784K  alfa-mos
 afp9566w.pdf pdf_icon

AFP9577

AFP9566W Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9566W, P-Channel enhancement mode -40V/-5.0A,RDS(ON)= 80m@VGS= -10V MOSFET, uses Advanced Trench Technology -40V/-3.5A,RDS(ON)= 105m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularl

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Datasheet: AFP9434WS , AFP9435S , AFP9435WS , AFP9510S , AFP9565S , AFP9566W , AFP9575S , AFP9576 , IRF520 , ALD1101APAL , ALD1101ASAL , ALD1101BPAL , ALD1101BSAL , ALD1101PAL , ALD1101SAL , ALD1102APAL , ALD1102ASAL .

History: IPI180N10N3G | CEA6426 | IRF9358PBF | 2SK1565 | IPP80N04S2-04 | STP20NF06L | VB1106K

Keywords - AFP9577 MOSFET datasheet

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