IRFB13N50APBF Todos los transistores

 ..1. Size:189K  international rectifier
 irfb13n50apbf.pdf

PD - 95122 SMPS MOSFET IRFB13N50APbF HEXFET Power MOSFET AppIications VDSS RDS(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.450 14A l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness l Fully Characterized Capacitance and Avalanch

 ..2. Size:201K  vishay
 irfb13n50a irfb13n50apbf sihfb13n50a.pdf

IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler Drive VDS (V) 500 Reqirements Available RDS(on) ( )VGS = 10 V 0.450 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 81 COMPLIANT Ruggedness Qgs (nC) 20 Qgd (nC) 36 Fully Characterized Capacitance and Avalanche Voltage Configuratio

 4.1. Size:97K  international rectifier
 irfb13n50a.pdf

PD - 94339 SMPS MOSFET IRFB13N50A HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.450 14A High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current

 4.2. Size:201K  vishay
 irfb13n50a sihfb13n50a.pdf

IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler Drive VDS (V) 500 Reqirements Available RDS(on) ( )VGS = 10 V 0.450 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 81 COMPLIANT Ruggedness Qgs (nC) 20 Qgd (nC) 36 Fully Characterized Capacitance and Avalanche Voltage Configuratio

 4.3. Size:156K  infineon
 irfb13n50a sihfb13n50a.pdf

IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler Drive VDS (V) 500 Available Reqirements RDS(on) ( )VGS = 10 V 0.450 RoHS* Qg (Max.) (nC) 81 Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qgs (nC) 20 Ruggedness Qgd (nC) 36 Fully Characterized Capacitance and Avalanche Voltage Configuration

 4.4. Size:284K  inchange semiconductor
 irfb13n50a.pdf

iscN-Channel MOSFET Transistor IRFB13N50A FEATURES Low drain-source on-resistance RDS(ON) =0.45 (MAX) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL