IRFB13N50APBF PDF and Equivalents Search

 

IRFB13N50APBF Specs and Replacement


   Type Designator: IRFB13N50APBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: TO-220AB
 

 IRFB13N50APBF substitution

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IRFB13N50APBF datasheet

 ..1. Size:189K  international rectifier
irfb13n50apbf.pdf pdf_icon

IRFB13N50APBF

PD - 95122 SMPS MOSFET IRFB13N50APbF HEXFET Power MOSFET AppIications VDSS RDS(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.450 14A l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness l Fully Characterized Capacitance and Avalanch... See More ⇒

 ..2. Size:201K  vishay
irfb13n50a irfb13n50apbf sihfb13n50a.pdf pdf_icon

IRFB13N50APBF

IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler Drive VDS (V) 500 Reqirements Available RDS(on) ( )VGS = 10 V 0.450 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 81 COMPLIANT Ruggedness Qgs (nC) 20 Qgd (nC) 36 Fully Characterized Capacitance and Avalanche Voltage Configuratio... See More ⇒

 4.1. Size:97K  international rectifier
irfb13n50a.pdf pdf_icon

IRFB13N50APBF

PD - 94339 SMPS MOSFET IRFB13N50A HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.450 14A High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current... See More ⇒

 4.2. Size:201K  vishay
irfb13n50a sihfb13n50a.pdf pdf_icon

IRFB13N50APBF

IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler Drive VDS (V) 500 Reqirements Available RDS(on) ( )VGS = 10 V 0.450 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 81 COMPLIANT Ruggedness Qgs (nC) 20 Qgd (nC) 36 Fully Characterized Capacitance and Avalanche Voltage Configuratio... See More ⇒

Detailed specifications: ALD1106DB , ALD1106PBL , ALD1106SBL , ALD1116DA , ALD1116PAL , ALD1116SAL , IRFB11N50APBF , IRFB13N50A , IRF540N , IRFB16N50K , IRFB16N50KPBF , IRFB16N60LPBF , IRFB17N20D , IRFB17N20DPBF , IRFB17N50L , IRFB17N50LPBF , IRFB17N60K .

History: UF3205L-T3P-T | ZXMP2120E5 | HGD053N06SL

Keywords - IRFB13N50APBF MOSFET specs

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