IRFB17N50LPBF Todos los transistores

 

IRFB17N50LPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFB17N50LPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 220 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 51 nS

Cossⓘ - Capacitancia de salida: 325 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.32 Ohm

Encapsulados: TO-220AB

 Búsqueda de reemplazo de IRFB17N50LPBF MOSFET

- Selecciónⓘ de transistores por parámetros

 

IRFB17N50LPBF datasheet

 ..1. Size:189K  international rectifier
irfb17n50lpbf.pdf pdf_icon

IRFB17N50LPBF

PD - 95123 IRFB17N50LPbF SMPS MOSFET HEXFET Power MOSFET AppIications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply VDSS RDS(on) typ. ID l High Speed Power Switching 500V 0.28 16A l ZVS and High Frequency Circuit l PWM Inverters l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Rugged

 ..2. Size:211K  vishay
irfb17n50l irfb17n50lpbf sihfb17n50l.pdf pdf_icon

IRFB17N50LPBF

IRFB17N50L, SiHFB17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.28 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 130 COMPLIANT Ruggedness Qgs (nC) 33 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 59 and Current Co

 4.1. Size:82K  international rectifier
irfb17n50l.pdf pdf_icon

IRFB17N50LPBF

PD - 94084A IRFB17N50L SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply (SMPS) VDSS RDS(on) typ. ID Uninterruptible Power Supply High Speed Power Switching 500V 0.28 16A ZVS and High Frequency Circuit PWM Inverters Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Character

 4.2. Size:210K  vishay
irfb17n50l sihfb17n50l.pdf pdf_icon

IRFB17N50LPBF

IRFB17N50L, SiHFB17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.28 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 130 COMPLIANT Ruggedness Qgs (nC) 33 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 59 and Current Co

Otros transistores... IRFB13N50A , IRFB13N50APBF , IRFB16N50K , IRFB16N50KPBF , IRFB16N60LPBF , IRFB17N20D , IRFB17N20DPBF , IRFB17N50L , IRLZ44N , IRFB17N60K , IRFB17N60KPBF , IRFB18N50K , IRFB18N50KPBF , IRFB20N50K , IRFB20N50KPBF , IRFB23N15DPBF , IRFB23N20DPBF .

 

 

 

 

↑ Back to Top
.