All MOSFET. IRFB17N50LPBF Datasheet

 

IRFB17N50LPBF Datasheet and Replacement


   Type Designator: IRFB17N50LPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 220 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 130 nC
   tr ⓘ - Rise Time: 51 nS
   Cossⓘ - Output Capacitance: 325 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
   Package: TO-220AB
 

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IRFB17N50LPBF Datasheet (PDF)

 ..1. Size:189K  international rectifier
 irfb17n50lpbf.pdf pdf_icon

IRFB17N50LPBF

PD - 95123IRFB17N50LPbFSMPS MOSFETHEXFET Power MOSFETAppIicationsl Switch Mode Power Supply (SMPS)l Uninterruptible Power SupplyVDSS RDS(on) typ. IDl High Speed Power Switching500V 0.28 16Al ZVS and High Frequency Circuitl PWM Invertersl Lead-FreeBenefitsl Low Gate Charge Qg results in Simple Drive Requirementl Improved Gate, Avalanche and Dynamic dv/dt Rugged

 ..2. Size:211K  vishay
 irfb17n50l irfb17n50lpbf sihfb17n50l.pdf pdf_icon

IRFB17N50LPBF

IRFB17N50L, SiHFB17N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 0.28 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 130COMPLIANTRuggednessQgs (nC) 33 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 59and CurrentCo

 4.1. Size:82K  international rectifier
 irfb17n50l.pdf pdf_icon

IRFB17N50LPBF

PD - 94084AIRFB17N50LSMPS MOSFETHEXFET Power MOSFETApplications Switch Mode Power Supply (SMPS)VDSS RDS(on) typ. ID Uninterruptible Power Supply High Speed Power Switching500V 0.28 16A ZVS and High Frequency Circuit PWM InvertersBenefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Character

 4.2. Size:210K  vishay
 irfb17n50l sihfb17n50l.pdf pdf_icon

IRFB17N50LPBF

IRFB17N50L, SiHFB17N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 0.28 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 130COMPLIANTRuggednessQgs (nC) 33 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 59and CurrentCo

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Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: FCP190N60_GF102 | FCP220N80 | RU5H13R

Keywords - IRFB17N50LPBF MOSFET datasheet

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