Справочник MOSFET. IRFB17N50LPBF

 

IRFB17N50LPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFB17N50LPBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 220 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 16 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 51 ns
   Cossⓘ - Выходная емкость: 325 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.32 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для IRFB17N50LPBF

 

 

IRFB17N50LPBF Datasheet (PDF)

 ..1. Size:189K  international rectifier
 irfb17n50lpbf.pdf

IRFB17N50LPBF IRFB17N50LPBF

PD - 95123IRFB17N50LPbFSMPS MOSFETHEXFET Power MOSFETAppIicationsl Switch Mode Power Supply (SMPS)l Uninterruptible Power SupplyVDSS RDS(on) typ. IDl High Speed Power Switching500V 0.28 16Al ZVS and High Frequency Circuitl PWM Invertersl Lead-FreeBenefitsl Low Gate Charge Qg results in Simple Drive Requirementl Improved Gate, Avalanche and Dynamic dv/dt Rugged

 ..2. Size:211K  vishay
 irfb17n50l irfb17n50lpbf sihfb17n50l.pdf

IRFB17N50LPBF IRFB17N50LPBF

IRFB17N50L, SiHFB17N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 0.28 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 130COMPLIANTRuggednessQgs (nC) 33 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 59and CurrentCo

 4.1. Size:82K  international rectifier
 irfb17n50l.pdf

IRFB17N50LPBF IRFB17N50LPBF

PD - 94084AIRFB17N50LSMPS MOSFETHEXFET Power MOSFETApplications Switch Mode Power Supply (SMPS)VDSS RDS(on) typ. ID Uninterruptible Power Supply High Speed Power Switching500V 0.28 16A ZVS and High Frequency Circuit PWM InvertersBenefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Character

 4.2. Size:210K  vishay
 irfb17n50l sihfb17n50l.pdf

IRFB17N50LPBF IRFB17N50LPBF

IRFB17N50L, SiHFB17N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 0.28 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 130COMPLIANTRuggednessQgs (nC) 33 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 59and CurrentCo

 4.3. Size:284K  inchange semiconductor
 irfb17n50l.pdf

IRFB17N50LPBF IRFB17N50LPBF

iscN-Channel MOSFET Transistor IRFB17N50LFEATURESLow drain-source on-resistance:RDS(ON) =0.32 (MAX)Enhancement mode:Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

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