IRFB3207ZPBF Todos los transistores

 ..1. Size:330K  international rectifier
 irfb3207zpbf irfs3207zpbf irfsl3207zpbf.pdf

IRFB3207ZPbF IRFS3207ZPbF IRFSL3207ZPbF HEXFET Power MOSFET Applications D VDSS 75V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 3.3m l Uninterruptible Power Supply max. 4.1m G l High Speed Power Switching ID (Silicon Limited) 170A l Hard Switched and High Frequency Circuits S ID (Package Limited) 120A Benefits D D l Improved Gate, Avalanche and Dynamic

 5.1. Size:286K  international rectifier
 irfb3207zgpbf.pdf

PD - 96201 IRFB3207ZGPbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS D VDSS 75V l Uninterruptible Power Supply RDS(on) typ. 3.3m l High Speed Power Switching max. 4.1m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 170A ID (Package Limited) S 120A Benefits D l Improved Gate, Avalanche and Dynamic dv/dt Ruggednes

 5.2. Size:246K  inchange semiconductor
 irfb3207z.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB3207Z IIRFB3207Z FEATURES Static drain-source on-resistance RDS(on) 4.1m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIM

 5.3. Size:245K  inchange semiconductor
 irfb3207zg.pdf

isc N-Channel MOSFET Transistor IRFB3207ZG IIRFB3207ZG FEATURES Static drain-source on-resistance RDS(on) 4.1m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 )