IRFB3207ZPBF Datasheet. Specs and Replacement

Type Designator: IRFB3207ZPBF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 68 nS

Cossⓘ - Output Capacitance: 600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm

Package: TO-220AB

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IRFB3207ZPBF substitution

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IRFB3207ZPBF datasheet

 ..1. Size:330K  international rectifier
 irfb3207zpbf irfs3207zpbf irfsl3207zpbf.pdf pdf_icon

IRFB3207ZPBF

IRFB3207ZPbF IRFS3207ZPbF IRFSL3207ZPbF HEXFET Power MOSFET Applications D VDSS 75V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 3.3m l Uninterruptible Power Supply max. 4.1m G l High Speed Power Switching ID (Silicon Limited) 170A l Hard Switched and High Frequency Circuits S ID (Package Limited) 120A Benefits D D l Improved Gate, Avalanche and Dynamic... See More ⇒

 5.1. Size:286K  international rectifier
 irfb3207zgpbf.pdf pdf_icon

IRFB3207ZPBF

PD - 96201 IRFB3207ZGPbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS D VDSS 75V l Uninterruptible Power Supply RDS(on) typ. 3.3m l High Speed Power Switching max. 4.1m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 170A ID (Package Limited) S 120A Benefits D l Improved Gate, Avalanche and Dynamic dv/dt Ruggednes... See More ⇒

 5.2. Size:246K  inchange semiconductor
 irfb3207z.pdf pdf_icon

IRFB3207ZPBF

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB3207Z IIRFB3207Z FEATURES Static drain-source on-resistance RDS(on) 4.1m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIM... See More ⇒

 5.3. Size:245K  inchange semiconductor
 irfb3207zg.pdf pdf_icon

IRFB3207ZPBF

isc N-Channel MOSFET Transistor IRFB3207ZG IIRFB3207ZG FEATURES Static drain-source on-resistance RDS(on) 4.1m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒

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Detailed specifications: IRFB3006PBF, IRFB3077GPBF, IRFB3077PBF, IRFB31N20DPBF, IRFB3206GPBF, IRFB3206PBF, IRFB3207PBF, IRFB3207ZGPBF, IRF1010E, IRFB3306GPBF, IRFB3306PBF, IRFB3307PBF, IRFB3307ZPBF, IRFB33N15DPBF, IRFB3407ZPBF, IRFB3507PBF, IRFB3607GPBF

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