All MOSFET. IRFB3207ZPBF Datasheet

 

IRFB3207ZPBF Datasheet and Replacement


   Type Designator: IRFB3207ZPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 120 nC
   tr ⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm
   Package: TO-220AB
 

 IRFB3207ZPBF substitution

   - MOSFET ⓘ Cross-Reference Search

 

IRFB3207ZPBF Datasheet (PDF)

 ..1. Size:330K  international rectifier
irfb3207zpbf irfs3207zpbf irfsl3207zpbf.pdf pdf_icon

IRFB3207ZPBF

IRFB3207ZPbFIRFS3207ZPbFIRFSL3207ZPbFHEXFET Power MOSFETApplicationsDVDSS 75Vl High Efficiency Synchronous Rectification inSMPS RDS(on) typ. 3.3ml Uninterruptible Power Supply max. 4.1mGl High Speed Power SwitchingID (Silicon Limited) 170Al Hard Switched and High Frequency CircuitsS ID (Package Limited) 120ABenefitsDDl Improved Gate, Avalanche and Dynamic

 5.1. Size:286K  international rectifier
irfb3207zgpbf.pdf pdf_icon

IRFB3207ZPBF

PD - 96201IRFB3207ZGPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification inSMPSDVDSS 75Vl Uninterruptible Power SupplyRDS(on) typ. 3.3ml High Speed Power Switching max. 4.1ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 170AID (Package Limited)S 120ABenefitsDl Improved Gate, Avalanche and Dynamicdv/dt Ruggednes

 5.2. Size:246K  inchange semiconductor
irfb3207z.pdf pdf_icon

IRFB3207ZPBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB3207ZIIRFB3207ZFEATURESStatic drain-source on-resistance:RDS(on) 4.1mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIM

 5.3. Size:245K  inchange semiconductor
irfb3207zg.pdf pdf_icon

IRFB3207ZPBF

isc N-Channel MOSFET Transistor IRFB3207ZGIIRFB3207ZGFEATURESStatic drain-source on-resistance:RDS(on) 4.1mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: CS3205A8

Keywords - IRFB3207ZPBF MOSFET datasheet

 IRFB3207ZPBF cross reference
 IRFB3207ZPBF equivalent finder
 IRFB3207ZPBF lookup
 IRFB3207ZPBF substitution
 IRFB3207ZPBF replacement

 

 
Back to Top

 


 
.