Справочник MOSFET. IRFB3207ZPBF

 

IRFB3207ZPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFB3207ZPBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 68 ns
   Cossⓘ - Выходная емкость: 600 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0041 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для IRFB3207ZPBF

 

 

IRFB3207ZPBF Datasheet (PDF)

 ..1. Size:326K  international rectifier
 irfb3207zpbf irfs3207zpbf irfsl3207zpbf.pdf

IRFB3207ZPBF IRFB3207ZPBF

IRFB3207ZPbFIRFS3207ZPbFIRFSL3207ZPbFHEXFET Power MOSFETApplicationsDVDSS 75Vl High Efficiency Synchronous Rectification inSMPS RDS(on) typ. 3.3ml Uninterruptible Power Supply max. 4.1mGl High Speed Power SwitchingID (Silicon Limited) 170Al Hard Switched and High Frequency CircuitsS ID (Package Limited) 120ABenefitsDDl Improved Gate, Avalanche and Dynamic

 ..2. Size:330K  infineon
 irfb3207zpbf irfs3207zpbf irfsl3207zpbf.pdf

IRFB3207ZPBF IRFB3207ZPBF

IRFB3207ZPbFIRFS3207ZPbFIRFSL3207ZPbFHEXFET Power MOSFETApplicationsDVDSS 75Vl High Efficiency Synchronous Rectification inSMPS RDS(on) typ. 3.3ml Uninterruptible Power Supply max. 4.1mGl High Speed Power SwitchingID (Silicon Limited) 170Al Hard Switched and High Frequency CircuitsS ID (Package Limited) 120ABenefitsDDl Improved Gate, Avalanche and Dynamic

 5.1. Size:286K  international rectifier
 irfb3207zgpbf.pdf

IRFB3207ZPBF IRFB3207ZPBF

PD - 96201IRFB3207ZGPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification inSMPSDVDSS 75Vl Uninterruptible Power SupplyRDS(on) typ. 3.3ml High Speed Power Switching max. 4.1ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 170AID (Package Limited)S 120ABenefitsDl Improved Gate, Avalanche and Dynamicdv/dt Ruggednes

 5.2. Size:246K  inchange semiconductor
 irfb3207z.pdf

IRFB3207ZPBF IRFB3207ZPBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB3207ZIIRFB3207ZFEATURESStatic drain-source on-resistance:RDS(on) 4.1mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIM

 5.3. Size:245K  inchange semiconductor
 irfb3207zg.pdf

IRFB3207ZPBF IRFB3207ZPBF

isc N-Channel MOSFET Transistor IRFB3207ZGIIRFB3207ZGFEATURESStatic drain-source on-resistance:RDS(on) 4.1mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)

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History: PSMN1R2-25YL

 

 
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