IRFB5615PBF MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRFB5615PBF datasheet

..1. Size:272K international rectifier
irfb5615pbf.pdf pdf_icon

PD - 96173 DIGITAL AUDIO MOSFET IRFB5615PbF Features Key Parameters Key Parameters Optimized for Class-D Audio VDS 150 V Amplifier Applications RDS(ON) typ. @ 10V m 32 Low RDSON for Improved Efficiency Qg typ. 26 nC Qsw typ. Low QG and QSW for Better THD and Improved 11 nC RG(int) typ. 2.7 Efficiency TJ max 175 C Low QRR for Better THD and Lower EMI

6.1. Size:618K cn evvo
irfb5615.pdf pdf_icon

IRFB5615 N-Ch 150V Fast Switching MOSFETs General Description Product Summary Advanced Trench MOS Technology BVDSS RDSON ID Low Gate Charge 150V 13m 85A Low R DS(ON) 100% EAS Guaranteed Green Device Available TO220 Pin Configuration Applications Load Switch LED Applications Networking Applications Quick Charger Absolute Max

6.2. Size:245K inchange semiconductor
irfb5615.pdf pdf_icon

isc N-Channel MOSFET Transistor IRFB5615 IIRFB5615 FEATURES Static drain-source on-resistance RDS(on) 39m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION 175 operating junction temperature and high repetitive peak current capability ABSOLUTE MAXIMUM

8.1. Size:268K international rectifier
irfb5620pbf.pdf pdf_icon

PD - 96174 DIGITAL AUDIO MOSFET IRFB5620PbF Features Key Parameters Key Parameters Optimized for Class-D Audio VDS 200 V Amplifier Applications RDS(ON) typ. @ 10V m 60 Low RDSON for Improved Efficiency Qg typ. 25 nC Low QG and QSW for Better THD and Improved Qsw typ. 9.8 nC RG(int) typ. 2.6 Efficiency TJ max 175 C Low QRR for Better THD and Lower EM