Справочник MOSFET. IRFB5615PBF

 

IRFB5615PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFB5615PBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 144 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 35 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 26 nC
   trⓘ - Время нарастания: 23.1 ns
   Cossⓘ - Выходная емкость: 155 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.039 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для IRFB5615PBF

 

 

IRFB5615PBF Datasheet (PDF)

 ..1. Size:272K  international rectifier
 irfb5615pbf.pdf

IRFB5615PBF IRFB5615PBF

PD - 96173DIGITAL AUDIO MOSFETIRFB5615PbFFeaturesKey Parameters Key Parameters Optimized for Class-D AudioVDS150 V Amplifier ApplicationsRDS(ON) typ. @ 10V m32 Low RDSON for Improved Efficiency Qg typ.26 nCQsw typ. Low QG and QSW for Better THD and Improved 11 nCRG(int) typ. 2.7 EfficiencyTJ max175 C Low QRR for Better THD and Lower EMI

 ..2. Size:272K  infineon
 irfb5615pbf.pdf

IRFB5615PBF IRFB5615PBF

PD - 96173DIGITAL AUDIO MOSFETIRFB5615PbFFeaturesKey Parameters Key Parameters Optimized for Class-D AudioVDS150 V Amplifier ApplicationsRDS(ON) typ. @ 10V m32 Low RDSON for Improved Efficiency Qg typ.26 nCQsw typ. Low QG and QSW for Better THD and Improved 11 nCRG(int) typ. 2.7 EfficiencyTJ max175 C Low QRR for Better THD and Lower EMI

 6.1. Size:618K  cn evvo
 irfb5615.pdf

IRFB5615PBF IRFB5615PBF

IRFB5615N-Ch 150V Fast Switching MOSFETs General Description Product Summary Advanced Trench MOS Technology BVDSS RDSON ID Low Gate Charge 150V 13m 85A Low R DS(ON) 100% EAS Guaranteed Green Device Available TO220 Pin Configuration Applications Load Switch LED Applications Networking Applications Quick Charger Absolute Max

 6.2. Size:245K  inchange semiconductor
 irfb5615.pdf

IRFB5615PBF IRFB5615PBF

isc N-Channel MOSFET Transistor IRFB5615IIRFB5615FEATURESStatic drain-source on-resistance:RDS(on) 39mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175 operating junction temperature and high repetitive peakcurrent capabilityABSOLUTE MAXIMUM

 8.1. Size:268K  international rectifier
 irfb5620pbf.pdf

IRFB5615PBF IRFB5615PBF

PD - 96174DIGITAL AUDIO MOSFETIRFB5620PbFFeaturesKey Parameters Key Parameters Optimized for Class-D AudioVDS200 V Amplifier ApplicationsRDS(ON) typ. @ 10V m60 Low RDSON for Improved EfficiencyQg typ.25 nC Low QG and QSW for Better THD and Improved Qsw typ.9.8 nCRG(int) typ. 2.6 EfficiencyTJ max175 C Low QRR for Better THD and Lower EM

 8.2. Size:268K  infineon
 irfb5620pbf.pdf

IRFB5615PBF IRFB5615PBF

PD - 96174DIGITAL AUDIO MOSFETIRFB5620PbFFeaturesKey Parameters Key Parameters Optimized for Class-D AudioVDS200 V Amplifier ApplicationsRDS(ON) typ. @ 10V m60 Low RDSON for Improved EfficiencyQg typ.25 nC Low QG and QSW for Better THD and Improved Qsw typ.9.8 nCRG(int) typ. 2.6 EfficiencyTJ max175 C Low QRR for Better THD and Lower EM

 8.3. Size:244K  inchange semiconductor
 irfb5620.pdf

IRFB5615PBF IRFB5615PBF

isc N-Channel MOSFET Transistor IRFB5620IIRFB5620FEATURESStatic drain-source on-resistance:RDS(on) 72.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175 operating junction temperature and repetitive avalanchecapabilityABSOLUTE MAXIMUM RATIN

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: PMN40UPE | HYG060N08NS1V | BL25N60-F | 2N7022

 

 
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