IRFB5615PBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFB5615PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 144 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 35 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 26 nC
trⓘ - Rise Time: 23.1 nS
Cossⓘ - Output Capacitance: 155 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
Package: TO-220AB
IRFB5615PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFB5615PBF Datasheet (PDF)
irfb5615pbf.pdf
PD - 96173DIGITAL AUDIO MOSFETIRFB5615PbFFeaturesKey Parameters Key Parameters Optimized for Class-D AudioVDS150 V Amplifier ApplicationsRDS(ON) typ. @ 10V m32 Low RDSON for Improved Efficiency Qg typ.26 nCQsw typ. Low QG and QSW for Better THD and Improved 11 nCRG(int) typ. 2.7 EfficiencyTJ max175 C Low QRR for Better THD and Lower EMI
irfb5615pbf.pdf
PD - 96173DIGITAL AUDIO MOSFETIRFB5615PbFFeaturesKey Parameters Key Parameters Optimized for Class-D AudioVDS150 V Amplifier ApplicationsRDS(ON) typ. @ 10V m32 Low RDSON for Improved Efficiency Qg typ.26 nCQsw typ. Low QG and QSW for Better THD and Improved 11 nCRG(int) typ. 2.7 EfficiencyTJ max175 C Low QRR for Better THD and Lower EMI
irfb5615.pdf
isc N-Channel MOSFET Transistor IRFB5615IIRFB5615FEATURESStatic drain-source on-resistance:RDS(on) 39mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175 operating junction temperature and high repetitive peakcurrent capabilityABSOLUTE MAXIMUM
irfb5620pbf.pdf
PD - 96174DIGITAL AUDIO MOSFETIRFB5620PbFFeaturesKey Parameters Key Parameters Optimized for Class-D AudioVDS200 V Amplifier ApplicationsRDS(ON) typ. @ 10V m60 Low RDSON for Improved EfficiencyQg typ.25 nC Low QG and QSW for Better THD and Improved Qsw typ.9.8 nCRG(int) typ. 2.6 EfficiencyTJ max175 C Low QRR for Better THD and Lower EM
irfb5620pbf.pdf
PD - 96174DIGITAL AUDIO MOSFETIRFB5620PbFFeaturesKey Parameters Key Parameters Optimized for Class-D AudioVDS200 V Amplifier ApplicationsRDS(ON) typ. @ 10V m60 Low RDSON for Improved EfficiencyQg typ.25 nC Low QG and QSW for Better THD and Improved Qsw typ.9.8 nCRG(int) typ. 2.6 EfficiencyTJ max175 C Low QRR for Better THD and Lower EM
irfb5620.pdf
isc N-Channel MOSFET Transistor IRFB5620IIRFB5620FEATURESStatic drain-source on-resistance:RDS(on) 72.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175 operating junction temperature and repetitive avalanchecapabilityABSOLUTE MAXIMUM RATIN
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
