IRFB9N60APBF Todos los transistores

 ..1. Size:157K  international rectifier
 irfb9n60apbf.pdf

PD - 94821 SMPS MOSFET IRFB9N60APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 600V 0.75 9.2A High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche V

 5.1. Size:135K  international rectifier
 irfb9n60a.pdf

PD - 91811 IRFB9N60A HEXFET Power MOSFET Dynamic dv/dt Rating D Repetitive Avalanche Rated VDSS = 600V Fast Switching Ease of Paraleling RDS(on) = 0.75 Simple Drive Requirements G ID = 9.2A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance a

 5.2. Size:211K  vishay
 irfb9n60a sihfb9n60a.pdf

IRFB9N60A, SiHFB9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 0.75 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 49 COMPLIANT Ruggedness Qgs (nC) 13 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 20 and Current Config

 5.3. Size:285K  inchange semiconductor
 irfb9n60a.pdf

iscN-Channel MOSFET Transistor IRFB9N60A FEATURES Low drain-source on-resistance RDS(ON) =0.75 (MAX) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU