IRFB9N60APBF Datasheet and Replacement. Cross Reference Search

IRFB9N60APBF Datasheet (PDF)

..1. Size:157K international rectifier
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PD - 94821SMPS MOSFETIRFB9N60APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 600V 0.75 9.2A High speed power switching Lead-FreeBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche V

5.1. Size:135K international rectifier
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PD - 91811IRFB9N60AHEXFET Power MOSFET Dynamic dv/dt RatingD Repetitive Avalanche RatedVDSS = 600V Fast Switching Ease of ParalelingRDS(on) = 0.75 Simple Drive RequirementsGID = 9.2ASDescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching, ruggedized device design, low on-resistance a

5.2. Size:211K vishay
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IRFB9N60A, SiHFB9N60AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 0.75RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 49COMPLIANTRuggednessQgs (nC) 13 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 20and CurrentConfig

5.3. Size:285K inchange semiconductor
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iscN-Channel MOSFET Transistor IRFB9N60AFEATURESLow drain-source on-resistance:RDS(ON) =0.75 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

Datasheet: IRFB4620PBF , IRFB4710PBF , IRFB52N15DPBF , IRFB5615PBF , IRFB5620PBF , IRFB59N10DPBF , IRFB61N15DPBF , IRFB9N30APBF , MMIS60R580P , IRFB9N65APBF , IRFBA1404PPBF , IRFBA1405PPBF , IRFBA22N50APBF , IRFBA90N20DPBF , IRFBC20LPBF , IRFBC20PBF , IRFBC30AL .