IRFB9N60APBF Datasheet. Specs and Replacement

Type Designator: IRFB9N60APBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 170 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: TO-220AB

IRFB9N60APBF substitution

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IRFB9N60APBF datasheet

 ..1. Size:157K  international rectifier
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IRFB9N60APBF

PD - 94821 SMPS MOSFET IRFB9N60APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 600V 0.75 9.2A High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche V... See More ⇒

 5.1. Size:135K  international rectifier
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IRFB9N60APBF

PD - 91811 IRFB9N60A HEXFET Power MOSFET Dynamic dv/dt Rating D Repetitive Avalanche Rated VDSS = 600V Fast Switching Ease of Paraleling RDS(on) = 0.75 Simple Drive Requirements G ID = 9.2A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance a... See More ⇒

 5.2. Size:211K  vishay
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IRFB9N60APBF

IRFB9N60A, SiHFB9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 0.75 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 49 COMPLIANT Ruggedness Qgs (nC) 13 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 20 and Current Config... See More ⇒

 5.3. Size:285K  inchange semiconductor
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IRFB9N60APBF

iscN-Channel MOSFET Transistor IRFB9N60A FEATURES Low drain-source on-resistance RDS(ON) =0.75 (MAX) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU... See More ⇒

Detailed specifications: IRFB4620PBF, IRFB4710PBF, IRFB52N15DPBF, IRFB5615PBF, IRFB5620PBF, IRFB59N10DPBF, IRFB61N15DPBF, IRFB9N30APBF, 7N60, IRFB9N65APBF, IRFBA1404PPBF, IRFBA1405PPBF, IRFBA22N50APBF, IRFBA90N20DPBF, IRFBC20LPBF, IRFBC20PBF, IRFBC30AL

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