IRLW630A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRLW630A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 69 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 18.6 nC
   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
   Paquete / Cubierta: TO263

Búsqueda de reemplazo de MOSFET IRLW630A

IRLW630A Datasheet (PDF)

..1. Size:226K fairchild semi
irlw630a irli630a.pdf

IRLW/I630AFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 150C Operating Temperature2 Lower Leakage Current: 10A (Max.) @ VDS = 200V Lower RDS(ON): 0.335 (Typ.)112331. Gate 2. Drain 3

..2. Size:1006K samsung
irlw630a.pdf

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.335 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute M

9.1. Size:204K 1
irli620a irlw620a.pdf

9.2. Size:201K 1
irli640a irlw640a.pdf

9.3. Size:234K fairchild semi
irlw610a irli610a.pdf

IRLW/I610AFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.3 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 150C Operating Temperature2 Lower Leakage Current: 10A (Max.) @ VDS = 200V Lower RDS(ON): 1.185 (Typ.)112331. Gate 2. Drain

9.4. Size:983K samsung
irlw640a.pdf

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input CapacitanceID = 18 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.145 (Typ.)112331. Gate 2. Drain 3. SourceAbsolut

9.5. Size:911K samsung
irlw610a.pdf

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.3 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 1.185 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute

9.6. Size:929K samsung
irlw620a.pdf

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.609 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute M

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