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IRLW630A Spec and Replacement


   Type Designator: IRLW630A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 69 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO263

 IRLW630A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLW630A Specs

 ..1. Size:226K  fairchild semi
irlw630a irli630a.pdf pdf_icon

IRLW630A

IRLW/I630A FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK 150 C Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.335 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3... See More ⇒

 ..2. Size:1006K  samsung
irlw630a.pdf pdf_icon

IRLW630A

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.335 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute M... See More ⇒

 9.1. Size:204K  1
irli620a irlw620a.pdf pdf_icon

IRLW630A

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 9.2. Size:201K  1
irli640a irlw640a.pdf pdf_icon

IRLW630A

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Detailed specifications: IRLU3303 , IRLU3410 , IRLW510A , IRLW520A , IRLW530A , IRLW540A , IRLW610A , IRLW620A , IRF640 , IRLW640A , IRLWZ14A , IRLWZ24A , IRLWZ34A , IRLWZ44A , IRLZ10 , IRLZ14 , IRLZ14A .

History: IRF4905L

Keywords - IRLW630A MOSFET specs

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