IRFBF30PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFBF30PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 78 nC
   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 320 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.7 Ohm
   Paquete / Cubierta: TO-220AB

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IRFBF30PBF Datasheet (PDF)

..1. Size:241K international rectifier
irfbf30pbf.pdf

PD - 95631IRFBF30PbF Lead-Free8/4/04Document Number: 91122 www.vishay.com1IRFBF30PbFDocument Number: 91122 www.vishay.com2IRFBF30PbFDocument Number: 91122 www.vishay.com3IRFBF30PbFDocument Number: 91122 www.vishay.com4IRFBF30PbFDocument Number: 91122 www.vishay.com5IRFBF30PbFDocument Number: 91122 www.vishay.com6IRFBF30PbFPeak Diode Recovery

..2. Size:1073K vishay
irfbf30pbf sihfbf30.pdf

IRFBF30, SiHFBF30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.7RoHS* Fast SwitchingQg (Max.) (nC) 78COMPLIANTQgs (nC) 10 Ease of ParallelingQgd (nC) 42 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD

7.1. Size:166K international rectifier
irfbf30.pdf

7.2. Size:57K international rectifier
irfbf30m.pdf

TranElectric IRFCF30Die for HexfetDie SpecificationGeneral description :Hexfet power MOSFET diewith the following features:* Dynamic dv/dt rating* Ease of paralleing* Repetitve avalanche rated* Fast switchingMechanical Characteristic:Silicon ChipDimension (mm): 4.42*5.32Dimension (mil): 174*206Thickness:Metallization: AlRecommended wire(mm): 0.25 Recommende

7.3. Size:1070K vishay
irfbf30 sihfbf30.pdf

7.4. Size:261K vishay
irfbf30s irfbf30spbf.pdf

IRFBF30S, SiHFBF30SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 900DefinitionRDS(on) ()VGS = 10 V 3.7 Dynamic dV/dt RatingQg (Max.) (nC) 78 Repetitive Avalanche RatedQgs (nC) 10 Fast SwitchingQgd (nC) 42 Ease of Paralleling Simple Drive RequirementsConfiguration Single Compliant to R

7.5. Size:285K inchange semiconductor
irfbf30.pdf

iscN-Channel MOSFET Transistor IRFBF30FEATURESLow drain-source on-resistance:RDS(ON) =3.7 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

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