All MOSFET. IRFBF30PBF Datasheet

 

IRFBF30PBF MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFBF30PBF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 3.6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 78 nC

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 320 pF

Maximum Drain-Source On-State Resistance (Rds): 3.7 Ohm

Package: TO-220AB

IRFBF30PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFBF30PBF Datasheet (PDF)

1.1. irfbf30pbf.pdf Size:1073K _upd-mosfet

IRFBF30PBF
IRFBF30PBF

IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 900 Available • Repetitive Avalanche Rated RDS(on) ()VGS = 10 V 3.7 RoHS* • Fast Switching Qg (Max.) (nC) 78 COMPLIANT Qgs (nC) 10 • Ease of Paralleling Qgd (nC) 42 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D D

1.2. irfbf30pbf.pdf Size:241K _international_rectifier

IRFBF30PBF
IRFBF30PBF

PD - 95631 IRFBF30PbF Lead-Free 8/4/04 Document Number: 91122 www.vishay.com 1 IRFBF30PbF Document Number: 91122 www.vishay.com 2 IRFBF30PbF Document Number: 91122 www.vishay.com 3 IRFBF30PbF Document Number: 91122 www.vishay.com 4 IRFBF30PbF Document Number: 91122 www.vishay.com 5 IRFBF30PbF Document Number: 91122 www.vishay.com 6 IRFBF30PbF Peak Diode Recovery dv/dt

 3.1. irfbf30s irfbf30spbf.pdf Size:261K _upd-mosfet

IRFBF30PBF
IRFBF30PBF

IRFBF30S, SiHFBF30S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 900 Definition RDS(on) ()VGS = 10 V 3.7 • Dynamic dV/dt Rating Qg (Max.) (nC) 78 • Repetitive Avalanche Rated Qgs (nC) 10 • Fast Switching Qgd (nC) 42 • Ease of Paralleling • Simple Drive Requirements Configuration Single • Compliant to R

3.2. irfbf30m.pdf Size:57K _international_rectifier

IRFBF30PBF
IRFBF30PBF

TranElectric IRFCF30 Die for Hexfet Die Specification General description : Hexfet power MOSFET die with the following features: * Dynamic dv/dt rating * Ease of paralleing * Repetitve avalanche rated * Fast switching Mechanical Characteristic: Silicon Chip Dimension (mm): 4.42*5.32 Dimension (mil): 174*206 Thickness: Metallization: Al Recommended wire(mm): 0.25 Recommended wir

 3.3. irfbf30.pdf Size:166K _international_rectifier

IRFBF30PBF
IRFBF30PBF

3.4. irfbf30 sihfbf30.pdf Size:1070K _vishay

IRFBF30PBF
IRFBF30PBF

IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 900 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 3.7 RoHS* Fast Switching Qg (Max.) (nC) 78 COMPLIANT Qgs (nC) 10 Ease of Paralleling Qgd (nC) 42 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-22

Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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