IRFBF30SPBF Todos los transistores

 ..1. Size:261K  vishay
 irfbf30s irfbf30spbf.pdf

IRFBF30S, SiHFBF30S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 900 Definition RDS(on) ( )VGS = 10 V 3.7 Dynamic dV/dt Rating Qg (Max.) (nC) 78 Repetitive Avalanche Rated Qgs (nC) 10 Fast Switching Qgd (nC) 42 Ease of Paralleling Simple Drive Requirements Configuration Single Compliant to R

 7.1. Size:241K  international rectifier
 irfbf30pbf.pdf

PD - 95631 IRFBF30PbF Lead-Free 8/4/04 Document Number 91122 www.vishay.com 1 IRFBF30PbF Document Number 91122 www.vishay.com 2 IRFBF30PbF Document Number 91122 www.vishay.com 3 IRFBF30PbF Document Number 91122 www.vishay.com 4 IRFBF30PbF Document Number 91122 www.vishay.com 5 IRFBF30PbF Document Number 91122 www.vishay.com 6 IRFBF30PbF Peak Diode Recovery

 7.2. Size:166K  international rectifier
 irfbf30.pdf

 7.3. Size:57K  international rectifier
 irfbf30m.pdf

TranElectric IRFCF30 Die for Hexfet Die Specification General description Hexfet power MOSFET die with the following features * Dynamic dv/dt rating * Ease of paralleing * Repetitve avalanche rated * Fast switching Mechanical Characteristic Silicon Chip Dimension (mm) 4.42*5.32 Dimension (mil) 174*206 Thickness Metallization Al Recommended wire(mm) 0.25 Recommende

 7.4. Size:1073K  vishay
 irfbf30pbf sihfbf30.pdf

IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 900 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.7 RoHS* Fast Switching Qg (Max.) (nC) 78 COMPLIANT Qgs (nC) 10 Ease of Paralleling Qgd (nC) 42 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D D

 7.5. Size:1070K  vishay
 irfbf30 sihfbf30.pdf

IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 900 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.7 RoHS* Fast Switching Qg (Max.) (nC) 78 COMPLIANT Qgs (nC) 10 Ease of Paralleling Qgd (nC) 42 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D D

 7.6. Size:285K  inchange semiconductor
 irfbf30.pdf

iscN-Channel MOSFET Transistor IRFBF30 FEATURES Low drain-source on-resistance RDS(ON) =3.7 (MAX) Enhancement mode Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT