IRFBF30SPBF Datasheet and Replacement
Type Designator: IRFBF30SPBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 320 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.7 Ohm
Package: TO-263
IRFBF30SPBF substitution
IRFBF30SPBF Datasheet (PDF)
irfbf30s irfbf30spbf.pdf
IRFBF30S, SiHFBF30SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 900DefinitionRDS(on) ()VGS = 10 V 3.7 Dynamic dV/dt RatingQg (Max.) (nC) 78 Repetitive Avalanche RatedQgs (nC) 10 Fast SwitchingQgd (nC) 42 Ease of Paralleling Simple Drive RequirementsConfiguration Single Compliant to R
irfbf30pbf.pdf
PD - 95631IRFBF30PbF Lead-Free8/4/04Document Number: 91122 www.vishay.com1IRFBF30PbFDocument Number: 91122 www.vishay.com2IRFBF30PbFDocument Number: 91122 www.vishay.com3IRFBF30PbFDocument Number: 91122 www.vishay.com4IRFBF30PbFDocument Number: 91122 www.vishay.com5IRFBF30PbFDocument Number: 91122 www.vishay.com6IRFBF30PbFPeak Diode Recovery
irfbf30m.pdf
TranElectric IRFCF30Die for HexfetDie SpecificationGeneral description :Hexfet power MOSFET diewith the following features:* Dynamic dv/dt rating* Ease of paralleing* Repetitve avalanche rated* Fast switchingMechanical Characteristic:Silicon ChipDimension (mm): 4.42*5.32Dimension (mil): 174*206Thickness:Metallization: AlRecommended wire(mm): 0.25 Recommende
Datasheet: IRFBE30LPBF , IRFBE30PBF , IRFBE30S , IRFBE30SPBF , IRFBF20PBF , IRFBF20SPBF , IRFBF30PBF , IRFBF30S , AO4407 , IRFBG20PBF , IRFBG30PBF , IRFD010 , IRFD012 , IRFD014PBF , IRFD020 , IRFD020PBF , IRFD024PBF .
History: AFN6018S
Keywords - IRFBF30SPBF MOSFET datasheet
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: AFN6018S
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