IRFBG30PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFBG30PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1000 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 140 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm

Encapsulados: TO-220AB

 Búsqueda de reemplazo de IRFBG30PBF MOSFET

- Selecciónⓘ de transistores por parámetros

 

IRFBG30PBF datasheet

 ..1. Size:2101K  international rectifier
irfbg30pbf.pdf pdf_icon

IRFBG30PBF

PD - 94989 IRFBG30PbF Lead-Free 2/9/04 Document Number 91124 www.vishay.com 1 IRFBG30PbF Document Number 91124 www.vishay.com 2 IRFBG30PbF Document Number 91124 www.vishay.com 3 IRFBG30PbF Document Number 91124 www.vishay.com 4 IRFBG30PbF Document Number 91124 www.vishay.com 5 IRFBG30PbF Document Number 91124 www.vishay.com 6 IRFBG30PbF TO-220AB Package Out

 ..2. Size:835K  vishay
irfbg30pbf sihfbg30.pdf pdf_icon

IRFBG30PBF

IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 1000 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 5.0 RoHS* Fast Switching Qg (Max.) (nC) 80 COMPLIANT Ease of Paralleling Qgs (nC) 10 Qgd (nC) 42 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D

 7.1. Size:167K  international rectifier
irfbg30.pdf pdf_icon

IRFBG30PBF

 7.2. Size:1563K  vishay
irfbg30 sihfbg30.pdf pdf_icon

IRFBG30PBF

IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 1000 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 5.0 RoHS* Fast Switching Qg (Max.) (nC) 80 COMPLIANT Ease of Paralleling Qgs (nC) 10 Qgd (nC) 42 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D D

Otros transistores... IRFBE30S, IRFBE30SPBF, IRFBF20PBF, IRFBF20SPBF, IRFBF30PBF, IRFBF30S, IRFBF30SPBF, IRFBG20PBF, 4N60, IRFD010, IRFD012, IRFD014PBF, IRFD020, IRFD020PBF, IRFD024PBF, IRFD110PBF, IRFD113PBF