All MOSFET. IRFBG30PBF Datasheet

 

IRFBG30PBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFBG30PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 3.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 80 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO-220AB

 IRFBG30PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFBG30PBF Datasheet (PDF)

 ..1. Size:2101K  international rectifier
 irfbg30pbf.pdf

IRFBG30PBF IRFBG30PBF

PD - 94989IRFBG30PbF Lead-Free2/9/04Document Number: 91124 www.vishay.com1IRFBG30PbFDocument Number: 91124 www.vishay.com2IRFBG30PbFDocument Number: 91124 www.vishay.com3IRFBG30PbFDocument Number: 91124 www.vishay.com4IRFBG30PbFDocument Number: 91124 www.vishay.com5IRFBG30PbFDocument Number: 91124 www.vishay.com6IRFBG30PbFTO-220AB Package Out

 ..2. Size:835K  vishay
 irfbg30pbf sihfbg30.pdf

IRFBG30PBF IRFBG30PBF

IRFBG30, SiHFBG30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 1000Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 5.0RoHS* Fast SwitchingQg (Max.) (nC) 80COMPLIANT Ease of ParallelingQgs (nC) 10Qgd (nC) 42 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

 7.1. Size:167K  international rectifier
 irfbg30.pdf

IRFBG30PBF IRFBG30PBF

 7.2. Size:1563K  vishay
 irfbg30 sihfbg30.pdf

IRFBG30PBF IRFBG30PBF

IRFBG30, SiHFBG30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 1000Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 5.0RoHS* Fast SwitchingQg (Max.) (nC) 80COMPLIANT Ease of ParallelingQgs (nC) 10Qgd (nC) 42 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD

 7.3. Size:206K  inchange semiconductor
 irfbg30.pdf

IRFBG30PBF IRFBG30PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFBG30FEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top