IRFD210PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFD210PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 17 nS
Cossⓘ - Capacitancia de salida: 53 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
Paquete / Cubierta: DIP-4
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IRFD210PBF Datasheet (PDF)
irfd210pbf sihfd210.pdf
IRFD210, SiHFD210Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.5RoHS* For Automatic InsertionQg (Max.) (nC) 8.2COMPLIANT End StackableQgs (nC) 1.8 Fast SwitchingQgd (nC) 4.5 Ease of ParallelingConfiguration Single Simple Drive Requiremen
irfd210 sihfd210.pdf
IRFD210, SiHFD210Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.5RoHS* For Automatic InsertionQg (Max.) (nC) 8.2COMPLIANT End StackableQgs (nC) 1.8 Fast SwitchingQgd (nC) 4.5 Ease of ParallelingConfiguration Single Simple Drive Requiremen
irfd214.pdf
PD -9.1271IRFD214HEXFET Power MOSFETDynamic dv/dt RatingRepetitive Avalanche RatedVDSS = 250VFor Automatic InsertionEnd StackableRDS(on) = 2.0Fast SwitchingEase of parallelingSimple Drive RequirementsID = 0.45ADescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching, ruggedized device desi
irfd214 sihfd214.pdf
IRFD214, SiHFD214Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = 10 V 2.0 For Automatic InsertionRoHS*Qg (Max.) (nC) 8.2COMPLIANT End StackableQgs (nC) 1.8 Fast SwitchingQgd (nC) 4.5 Ease of ParallelingConfiguration Single Simple Drive Requiremen
irfd214pbf sihfd214.pdf
IRFD214, SiHFD214Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = 10 V 2.0 For Automatic InsertionRoHS*Qg (Max.) (nC) 8.2COMPLIANT End StackableQgs (nC) 1.8 Fast SwitchingQgd (nC) 4.5 Ease of ParallelingConfiguration Single Simple Drive Requiremen
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918