IRFD210PBF Specs and Replacement
Type Designator: IRFD210PBF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 53 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: DIP-4
IRFD210PBF substitution
- MOSFET ⓘ Cross-Reference Search
IRFD210PBF datasheet
irfd210pbf sihfd210.pdf
IRFD210, SiHFD210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.5 RoHS* For Automatic Insertion Qg (Max.) (nC) 8.2 COMPLIANT End Stackable Qgs (nC) 1.8 Fast Switching Qgd (nC) 4.5 Ease of Paralleling Configuration Single Simple Drive Requiremen... See More ⇒
irfd210 sihfd210.pdf
IRFD210, SiHFD210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.5 RoHS* For Automatic Insertion Qg (Max.) (nC) 8.2 COMPLIANT End Stackable Qgs (nC) 1.8 Fast Switching Qgd (nC) 4.5 Ease of Paralleling Configuration Single Simple Drive Requiremen... See More ⇒
irfd214.pdf
PD -9.1271 IRFD214 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated VDSS = 250V For Automatic Insertion End Stackable RDS(on) = 2.0 Fast Switching Ease of paralleling Simple Drive Requirements ID = 0.45A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device desi... See More ⇒
Detailed specifications: IRFD014PBF, IRFD020, IRFD020PBF, IRFD024PBF, IRFD110PBF, IRFD113PBF, IRFD120PBF, IRFD123PBF, IRF520, IRFD214PBF, IRFD220PBF, IRFD224PBF, IRFD310PBF, IRFD320PBF, IRFD420PBF, IRFD9010, IRFD9012
Keywords - IRFD210PBF MOSFET specs
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