IRFD224PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFD224PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.63 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 13 nS
Cossⓘ - Capacitancia de salida: 77 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.1 Ohm
Encapsulados: DIP-4
Búsqueda de reemplazo de IRFD224PBF MOSFET
- Selecciónⓘ de transistores por parámetros
IRFD224PBF datasheet
irfd224pbf.pdf
PD- 95923 IRFD224PbF Lead-Free 10/29/04 Document Number 91132 www.vishay.com 1 IRFD224PbF Document Number 91132 www.vishay.com 2 IRFD224PbF Document Number 91132 www.vishay.com 3 IRFD224PbF Document Number 91132 www.vishay.com 4 IRFD224PbF Document Number 91132 www.vishay.com 5 IRFD224PbF Document Number 91132 www.vishay.com 6 IRFD224PbF Document Number 91
irfd224pbf sihfd224.pdf
IRFD224, SiHFD224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.1 RoHS For Automatic Insertion COMPLIANT Qg (Max.) (nC) 14 End Stackable Qgs (nC) 2.7 Fast Switching Qgd (nC) 7.8 Ease of Paralleling Configuration Single Simple Drive Requirements D Co
irfd224.pdf
PD -9.1272 IRFD224 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated VDSS = 250V For Automatic Insertion End Stackable RDS(on) = 1.1 Fast Switching Ease of paralleling Simple Drive Requirements ID = 0.63A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device desi
irfd224 sihfd224.pdf
IRFD224, SiHFD224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.1 RoHS For Automatic Insertion COMPLIANT Qg (Max.) (nC) 14 End Stackable Qgs (nC) 2.7 Fast Switching Qgd (nC) 7.8 Ease of Paralleling Configuration Single Simple Drive Requirements D Co
Otros transistores... IRFD024PBF, IRFD110PBF, IRFD113PBF, IRFD120PBF, IRFD123PBF, IRFD210PBF, IRFD214PBF, IRFD220PBF, IRFZ24N, IRFD310PBF, IRFD320PBF, IRFD420PBF, IRFD9010, IRFD9012, IRFD9010PBF, IRFD9014PBF, IRFD9020PBF
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