All MOSFET. IRFD224PBF Datasheet

 

IRFD224PBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFD224PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 0.63 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 77 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: DIP-4

 IRFD224PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFD224PBF Datasheet (PDF)

 ..1. Size:927K  international rectifier
 irfd224pbf.pdf

IRFD224PBF IRFD224PBF

PD- 95923IRFD224PbF Lead-Free10/29/04Document Number: 91132 www.vishay.com1IRFD224PbFDocument Number: 91132 www.vishay.com2IRFD224PbFDocument Number: 91132 www.vishay.com3IRFD224PbFDocument Number: 91132 www.vishay.com4IRFD224PbFDocument Number: 91132 www.vishay.com5IRFD224PbFDocument Number: 91132 www.vishay.com6IRFD224PbFDocument Number: 91

 ..2. Size:1237K  vishay
 irfd224pbf sihfd224.pdf

IRFD224PBF IRFD224PBF

IRFD224, SiHFD224Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.1 RoHS For Automatic InsertionCOMPLIANT Qg (Max.) (nC) 14 End StackableQgs (nC) 2.7 Fast SwitchingQgd (nC) 7.8 Ease of ParallelingConfiguration Single Simple Drive RequirementsD Co

 7.1. Size:308K  international rectifier
 irfd224.pdf

IRFD224PBF IRFD224PBF

PD -9.1272IRFD224HEXFET Power MOSFETDynamic dv/dt RatingRepetitive Avalanche RatedVDSS = 250VFor Automatic InsertionEnd StackableRDS(on) = 1.1Fast SwitchingEase of parallelingSimple Drive RequirementsID = 0.63ADescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching, ruggedized device desi

 7.2. Size:1238K  vishay
 irfd224 sihfd224.pdf

IRFD224PBF IRFD224PBF

IRFD224, SiHFD224Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.1 RoHS For Automatic InsertionCOMPLIANT Qg (Max.) (nC) 14 End StackableQgs (nC) 2.7 Fast SwitchingQgd (nC) 7.8 Ease of ParallelingConfiguration Single Simple Drive RequirementsD Co

 8.1. Size:175K  international rectifier
 irfd220.pdf

IRFD224PBF IRFD224PBF

 8.2. Size:1890K  vishay
 irfd220 sihfd220.pdf

IRFD224PBF IRFD224PBF

IRFD220, SiHFD220Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.80RoHS* For Automatic InsertionQg (Max.) (nC) 14COMPLIANT End StackableQgs (nC) 3.0 Fast SwitchingQgd (nC) 7.9 Ease of ParallelingConfiguration Single Simple Drive Requiremen

 8.3. Size:1891K  vishay
 irfd220pbf sihfd220.pdf

IRFD224PBF IRFD224PBF

IRFD220, SiHFD220Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.80RoHS* For Automatic InsertionQg (Max.) (nC) 14COMPLIANT End StackableQgs (nC) 3.0 Fast SwitchingQgd (nC) 7.9 Ease of ParallelingConfiguration Single Simple Drive Requiremen

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: STL57N65M5

 

 
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