IRFD320PBF Todos los transistores

 

IRFD320PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFD320PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.49 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.8 Ohm
   Paquete / Cubierta: DIP-4
 

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IRFD320PBF Datasheet (PDF)

 ..1. Size:947K  international rectifier
 irfd320pbf.pdf pdf_icon

IRFD320PBF

PD- 95930IRFD320PbF Lead-Free10/28/04Document Number: 91134 www.vishay.com1IRFD320PbFDocument Number: 91134 www.vishay.com2IRFD320PbFDocument Number: 91134 www.vishay.com3IRFD320PbFDocument Number: 91134 www.vishay.com4IRFD320PbFDocument Number: 91134 www.vishay.com5IRFD320PbFDocument Number: 91134 www.vishay.com6IRFD320PbFDocument Number: 91

 ..2. Size:1337K  vishay
 irfd320pbf sihfd320.pdf pdf_icon

IRFD320PBF

IRFD320, SiHFD320Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.8RoHS For Automatic InsertionCOMPLIANT Qg (Max.) (nC) 20 End StackableQgs (nC) 3.3 Fast SwitchingQgd (nC) 11 Ease of ParallelingConfiguration Single Simple Drive RequirementsD C

 7.1. Size:320K  international rectifier
 irfd320.pdf pdf_icon

IRFD320PBF

PD -9.1226IRFD320HEXFET Power MOSFETDynamic dv/dt RatingRepetitive Avalanche RatedVDSS = 400VFor Automatic InsertionEnd StackableRDS(on) = 1.8Fast SwitchingEase of parallelingSimple Drive RequirementsID = 0.49ADescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching, ruggedized device desi

 7.2. Size:1335K  vishay
 irfd320 sihfd320.pdf pdf_icon

IRFD320PBF

IRFD320, SiHFD320Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.8RoHS For Automatic InsertionCOMPLIANT Qg (Max.) (nC) 20 End StackableQgs (nC) 3.3 Fast SwitchingQgd (nC) 11 Ease of ParallelingConfiguration Single Simple Drive RequirementsD C

MOSTRAR MÁS

Otros transistores... IRFD113PBF , IRFD120PBF , IRFD123PBF , IRFD210PBF , IRFD214PBF , IRFD220PBF , IRFD224PBF , IRFD310PBF , 8N60 , IRFD420PBF , IRFD9010 , IRFD9012 , IRFD9010PBF , IRFD9014PBF , IRFD9020PBF , IRFD9024PBF , IRFD9110PBF .

History: 8N80L-TA3-T | OSG90R340KF | JMTQ90N02A | OSG95R500FF | AP4232BGM-HF | OSG95R500HF | MMFT60R380PCTH

 

 
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