IRFD320PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFD320PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.49 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 20 nC
   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.8 Ohm
   Paquete / Cubierta: DIP-4

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IRFD320PBF Datasheet (PDF)

..1. Size:947K international rectifier
irfd320pbf.pdf

PD- 95930IRFD320PbF Lead-Free10/28/04Document Number: 91134 www.vishay.com1IRFD320PbFDocument Number: 91134 www.vishay.com2IRFD320PbFDocument Number: 91134 www.vishay.com3IRFD320PbFDocument Number: 91134 www.vishay.com4IRFD320PbFDocument Number: 91134 www.vishay.com5IRFD320PbFDocument Number: 91134 www.vishay.com6IRFD320PbFDocument Number: 91

..2. Size:1337K vishay
irfd320pbf sihfd320.pdf

IRFD320, SiHFD320Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.8RoHS For Automatic InsertionCOMPLIANT Qg (Max.) (nC) 20 End StackableQgs (nC) 3.3 Fast SwitchingQgd (nC) 11 Ease of ParallelingConfiguration Single Simple Drive RequirementsD C

7.1. Size:320K international rectifier
irfd320.pdf

PD -9.1226IRFD320HEXFET Power MOSFETDynamic dv/dt RatingRepetitive Avalanche RatedVDSS = 400VFor Automatic InsertionEnd StackableRDS(on) = 1.8Fast SwitchingEase of parallelingSimple Drive RequirementsID = 0.49ADescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching, ruggedized device desi

7.2. Size:1335K vishay
irfd320 sihfd320.pdf

9.1. Size:980K international rectifier
irfd310pbf.pdf

PD- 95932IRFD310PbF Lead-Free10/28/04Document Number: 91133 www.vishay.com1IRFD310PbFDocument Number: 91133 www.vishay.com2IRFD310PbFDocument Number: 91133 www.vishay.com3IRFD310PbFDocument Number: 91133 www.vishay.com4IRFD310PbFDocument Number: 91133 www.vishay.com5IRFD310PbFDocument Number: 91133 www.vishay.com6IRFD310PbFDocument Number: 91

9.2. Size:303K international rectifier
irfd310.pdf

PD -9.1225IRFD310HEXFET Power MOSFETDynamic dv/dt RatingRepetitive Avalanche RatedVDSS = 400VFor Automatic InsertionEnd StackableRDS(on) = 3.6Fast SwitchingEase of parallelingSimple Drive RequirementsID = 0.35ADescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching, ruggedized device desi

9.3. Size:1324K vishay
irfd310 sihfd310.pdf

IRFD310, SiHFD310Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.6RoHS* For Automatic InsertionCOMPLIANTQg (Max.) (nC) 17 End StackableQgs (nC) 3.4 Fast SwitchingQgd (nC) 8.5 Ease of ParallelingConfiguration Single Simple Drive Requirement

9.4. Size:1325K vishay
irfd310pbf sihfd310.pdf

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