All MOSFET. IRFD320PBF Datasheet

 

IRFD320PBF Datasheet and Replacement


   Type Designator: IRFD320PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.49 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
   Package: DIP-4
 

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IRFD320PBF Datasheet (PDF)

 ..1. Size:947K  international rectifier
irfd320pbf.pdf pdf_icon

IRFD320PBF

PD- 95930IRFD320PbF Lead-Free10/28/04Document Number: 91134 www.vishay.com1IRFD320PbFDocument Number: 91134 www.vishay.com2IRFD320PbFDocument Number: 91134 www.vishay.com3IRFD320PbFDocument Number: 91134 www.vishay.com4IRFD320PbFDocument Number: 91134 www.vishay.com5IRFD320PbFDocument Number: 91134 www.vishay.com6IRFD320PbFDocument Number: 91

 ..2. Size:1337K  vishay
irfd320pbf sihfd320.pdf pdf_icon

IRFD320PBF

IRFD320, SiHFD320Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.8RoHS For Automatic InsertionCOMPLIANT Qg (Max.) (nC) 20 End StackableQgs (nC) 3.3 Fast SwitchingQgd (nC) 11 Ease of ParallelingConfiguration Single Simple Drive RequirementsD C

 7.1. Size:320K  international rectifier
irfd320.pdf pdf_icon

IRFD320PBF

PD -9.1226IRFD320HEXFET Power MOSFETDynamic dv/dt RatingRepetitive Avalanche RatedVDSS = 400VFor Automatic InsertionEnd StackableRDS(on) = 1.8Fast SwitchingEase of parallelingSimple Drive RequirementsID = 0.49ADescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching, ruggedized device desi

 7.2. Size:1335K  vishay
irfd320 sihfd320.pdf pdf_icon

IRFD320PBF

IRFD320, SiHFD320Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.8RoHS For Automatic InsertionCOMPLIANT Qg (Max.) (nC) 20 End StackableQgs (nC) 3.3 Fast SwitchingQgd (nC) 11 Ease of ParallelingConfiguration Single Simple Drive RequirementsD C

Datasheet: IRFD113PBF , IRFD120PBF , IRFD123PBF , IRFD210PBF , IRFD214PBF , IRFD220PBF , IRFD224PBF , IRFD310PBF , K2611 , IRFD420PBF , IRFD9010 , IRFD9012 , IRFD9010PBF , IRFD9014PBF , IRFD9020PBF , IRFD9024PBF , IRFD9110PBF .

History: IXFR24N90P | BSS119L6327 | SQJ844AEP

Keywords - IRFD320PBF MOSFET datasheet

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