2SJ45 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SJ45
Tipo de FET: JFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 0.4 W
Tensión drenaje-fuente (Vds): 40 V
Corriente continua de drenaje (Id): 0.03 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Resistencia drenaje-fuente RDS(on): 500 Ohm
Empaquetado / Estuche: TO92
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2SJ45 Datasheet (PDF)
1.1. 2sj451.pdf 
Size:111K _renesas
2SJ451 Silicon P Channel MOS FET REJ03G0864-0400 Rev.4.00 Sep 07, 2007 Description Low frequency power switching Features Low on-resistance. Low drive power 2.5 V gate drive device. Small package (MPAK). Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) D 3 1. Source G 2. Gate 1 3. Drain 2 S Note: Marking is ZK. Absolute Maximum Ratin
1.2. 2sj45.pdf Size:2127K _nec
1.3. 2sj450.pdf Size:46K _hitachi
2SJ450 Silicon P-Channel MOS FET ADE-208-381 1st. Edition Application High speed power switching Features • Low on-resistance. • Low drive power • High speed switching • 2.5 V gate drive device. Outline UPAK 1 2 3 4 D 1. Gate G 2. Drain 3. Source 4. Drain S This datasheet has been downloaded from http://www.digchip.com at this page 2SJ450 Absolute Maximum Rati
Otros transistores... 2SJ331 , 2SJ353 , 2SJ411 , 2SJ424 , 2SJ425 , 2SJ44 , 2SJ448 , 2SJ449 , IRFP250N , 2SJ460 , 2SJ461 , 2SJ462 , 2SJ463 , 2SJ471 , 2SJ479 , 2SJ483 , 2SJ484 .
