2SJ45 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ45 📄📄

Tipo de FET: JFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Id|ⓘ - Corriente continua de drenaje: 0.03 A

Tjⓘ - Temperatura máxima de unión: 125 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 500 Ohm

Encapsulados: TO92

📄📄 Copiar

Búsqueda de reemplazo de 2SJ45 MOSFET

- Selecciónⓘ de transistores por parámetros

2SJ45 datasheet

..1. Size:2127K nec
2sj45.pdf pdf_icon

0.1. Size:177K sanyo
2sj455.pdf pdf_icon

2SJ455 Ordering number EN5441 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ455 Applications Features Low ON-state resistance. High-speed switching. Surface mount type device making the following possible. Reduction in the number of manufacturing processes for 2SJ455-applied equipment. High density surface mount a

0.2. Size:111K renesas
2sj451.pdf pdf_icon

2SJ451 Silicon P Channel MOS FET REJ03G0864-0400 Rev.4.00 Sep 07, 2007 Description Low frequency power switching Features Low on-resistance. Low drive power 2.5 V gate drive device. Small package (MPAK). Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) D 3 1. Source G 2. Gate 1 3. Drain 2 S Note Marking is ZK . Absol

0.3. Size:46K hitachi
2sj450.pdf pdf_icon

2SJ450 Silicon P-Channel MOS FET ADE-208-381 1st. Edition Application High speed power switching Features Low on-resistance. Low drive power High speed switching 2.5 V gate drive device. Outline UPAK 1 2 3 4 D 1. Gate G 2. Drain 3. Source 4. Drain S This datasheet has been downloaded from http //www.digchip.com at this page 2SJ450 Absolute Maximum Rati

Otros transistores... 2SJ331, 2SJ353, 2SJ411, 2SJ424, 2SJ425, 2SJ44, 2SJ448, 2SJ449, IRF2807, 2SJ460, 2SJ461, 2SJ462, 2SJ463, 2SJ471, 2SJ479, 2SJ483, 2SJ484

2SJ45 Datasheet. Equivalente