Справочник MOSFET. 2SJ45

 

2SJ45 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2SJ45

Тип транзистора: JFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 0.4 W

Предельно допустимое напряжение сток-исток (Uds): 40 V

Максимально допустимый постоянный ток стока (Id): 0.03 A

Максимальная температура канала (Tj): 125 °C

Сопротивление сток-исток открытого транзистора (Rds): 500 Ohm

Тип корпуса: TO92

Аналог (замена) для 2SJ45

 

 

2SJ45 Datasheet (PDF)

1.1. 2sj455.pdf Size:177K _update-mosfet

2SJ45
2SJ45

2SJ455 Ordering number : EN5441 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ455 Applications Features • Low ON-state resistance. • High-speed switching. • Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SJ455-applied equipment. • High density surface mount a

1.2. 2sj451.pdf Size:111K _renesas

2SJ45
2SJ45

2SJ451 Silicon P Channel MOS FET REJ03G0864-0400 Rev.4.00 Sep 07, 2007 Description Low frequency power switching Features Low on-resistance. Low drive power 2.5 V gate drive device. Small package (MPAK). Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) D 3 1. Source G 2. Gate 1 3. Drain 2 S Note: Marking is ZK. Absolute Maximum Ratin

 1.3. 2sj45.pdf Size:2127K _nec

2SJ45
2SJ45



1.4. 2sj450.pdf Size:46K _hitachi

2SJ45
2SJ45

2SJ450 Silicon P-Channel MOS FET ADE-208-381 1st. Edition Application High speed power switching Features • Low on-resistance. • Low drive power • High speed switching • 2.5 V gate drive device. Outline UPAK 1 2 3 4 D 1. Gate G 2. Drain 3. Source 4. Drain S This datasheet has been downloaded from http://www.digchip.com at this page 2SJ450 Absolute Maximum Rati

Другие MOSFET... 2SJ331 , 2SJ353 , 2SJ411 , 2SJ424 , 2SJ425 , 2SJ44 , 2SJ448 , 2SJ449 , IRFP250N , 2SJ460 , 2SJ461 , 2SJ462 , 2SJ463 , 2SJ471 , 2SJ479 , 2SJ483 , 2SJ484 .

 

 
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