2SJ45
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SJ45
Type of Transistor: JFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Id|ⓘ - Maximum Drain Current: 0.03
A
Tjⓘ - Maximum Junction Temperature: 125
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 500
Ohm
Package:
TO92
2SJ45
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SJ45
Datasheet (PDF)
0.1. Size:177K sanyo
2sj455.pdf
2SJ455Ordering number : EN5441SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching Device2SJ455ApplicationsFeatures Low ON-state resistance. High-speed switching. Surface mount type device making the following possible. Reduction in the number of manufacturing processes for 2SJ455-applied equipment. High density surface mount a
0.2. Size:111K renesas
2sj451.pdf
2SJ451 Silicon P Channel MOS FET REJ03G0864-0400 Rev.4.00 Sep 07, 2007 Description Low frequency power switching Features Low on-resistance. Low drive power 2.5 V gate drive device. Small package (MPAK). Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)D31. SourceG2. Gate13. Drain2SNote: Marking is ZK. Absol
0.3. Size:46K hitachi
2sj450.pdf
2SJ450Silicon P-Channel MOS FETADE-208-3811st. EditionApplicationHigh speed power switchingFeatures Low on-resistance. Low drive power High speed switching 2.5 V gate drive device.OutlineUPAK1234D1. GateG2. Drain3. Source4. DrainSThis datasheet has been downloaded from http://www.digchip.com at this page2SJ450Absolute Maximum Rati
Datasheet: 2SJ331
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