IRFH5007PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFH5007PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 17 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 510 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0059 Ohm

Encapsulados: PQFN5X6

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IRFH5007PBF datasheet

 ..1. Size:268K  international rectifier
 irfh5007pbf.pdf pdf_icon

IRFH5007PBF

IRFH5007PbF HEXFET Power MOSFET VDS 75 V RDS(on) max 5.9 m (@VGS = 10V) Qg (typical) 65 nC RG (typical) 1.2 ID 100 A (@Tmb = 25 C) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon ( 5.9m ) Lower Conduction Losses

 7.1. Size:263K  1
 irfh5006trpbf.pdf pdf_icon

IRFH5007PBF

IRFH5006PbF HEXFET Power MOSFET VDS 60 V RDS(on) max 4.1 m (@VGS = 10V) Qg (typical) 69 nC RG (typical) 1.2 ID 100 A (@Tmb = 25 C) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon ( 4.1m ) Lower Conduction Losses

 7.2. Size:259K  international rectifier
 irfh5004pbf.pdf pdf_icon

IRFH5007PBF

IRFH5004PbF HEXFET Power MOSFET VDS 40 V RDS(on) max 2.6 m (@VGS = 10V) Qg (typical) 73 nC RG (typical) 1.2 ID 100 A (@Tmb = 25 C) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon ( 2.6m ) Lower Conduction Losses L

 7.3. Size:263K  international rectifier
 irfh5006pbf.pdf pdf_icon

IRFH5007PBF

IRFH5006PbF HEXFET Power MOSFET VDS 60 V RDS(on) max 4.1 m (@VGS = 10V) Qg (typical) 69 nC RG (typical) 1.2 ID 100 A (@Tmb = 25 C) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon ( 4.1m ) Lower Conduction Losses

MOSTRAR MÁS

Otros transistores... IRFH4213, IRFH4213D, IRFH4226, IRFH4234, IRFH4251D, IRFH4253D, IRFH4255D, IRFH4257D, AO3400, IRFH5010PBF, IRFH5015PBF, IRFH5020PBF, IRFH5053PBF, IRFH5106PBF, IRFH5206PBF, IRFH5207PBF, IRFH5210PBF